STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT040H120G3AG

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Sous-total (1 bobine de 1000 unités)*

18 078,00 €

(TVA exclue)

21 874,00 €

(TVA incluse)

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la bobine*
1000 +18,078 €18 078,00 €

*Prix donné à titre indicatif

N° de stock RS:
215-231
Référence fabricant:
SCT040H120G3AG
Fabricant:
STMicroelectronics
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Marque

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

1200V

Series

SCT

Package Type

H2PAK-7

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

40mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

54nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

22 V

Maximum Power Dissipation Pd

300W

Forward Voltage Vf

2.6V

Maximum Operating Temperature

175°C

Height

4.8mm

Length

15.25mm

Width

10.4 mm

Standards/Approvals

AEC-Q101, RoHS

Automotive Standard

AEC-Q101

The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

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