Infineon HEXFET N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-247 IRFP140NPBF
- N° de stock RS:
- 541-1269
- Numéro d'article Distrelec:
- 303-41-344
- Référence fabricant:
- IRFP140NPBF
- Fabricant:
- Infineon
Sous-total (1 unité)*
2,81 €
(TVA exclue)
3,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- 24 unité(s) prête(s) à être expédiée(s)
- Plus 88 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 235 unité(s) expédiée(s) à partir du 02 novembre 2026
Unité | Prix par unité |
|---|---|
| 1 - 9 | 2,81 € |
| 10 - 49 | 2,41 € |
| 50 - 99 | 2,27 € |
| 100 - 249 | 2,12 € |
| 250 + | 1,93 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 541-1269
- Numéro d'article Distrelec:
- 303-41-344
- Référence fabricant:
- IRFP140NPBF
- Fabricant:
- Infineon
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 94nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 140W | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.3mm | |
| Length | 15.9mm | |
| Standards/Approvals | No | |
| Width | 5.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 94nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 140W | ||
Maximum Operating Temperature 175°C | ||
Height 20.3mm | ||
Length 15.9mm | ||
Standards/Approvals No | ||
Width 5.3mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRFP140NPBF
Features & Benefits
Applications
What is the maximum voltage this component can handle?
How does the gate charge affect the operation?
What are the thermal characteristics of this component?
Can this component be used in automation projects?
How does the low RDS(on) enhance its performance?
Liens connexes
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-247
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-247
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-247
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-247
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-247
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-247 IRFP4110PBF
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-247 IRFP4468PBF
