Infineon SIPMOS Type N-Channel MOSFET, 230 mA, 60 V Enhancement, 3-Pin SOT-23

N° de stock RS:: 826-9954
Numéro d'article Distrelec:: 304-44-425
Référence fabricant:: BSS138NH6327XTSA2
Fabricant:: Infineon

Infineon SIPMOS Type N-Channel MOSFET, 230 mA, 60 V Enhancement, 3-Pin SOT-23

Sous-total (1 bobine de 500 unités)*

24,50 €

(TVA exclue)

29,50 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

257 500 unité(s) expédiée(s) à partir du 14 août 2026

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Unité	Prix par unité	la bobine*
500 +	0,049 €	24,50 €

*Prix donné à titre indicatif

N° de stock RS:: 826-9954
Numéro d'article Distrelec:: 304-44-425
Référence fabricant:: BSS138NH6327XTSA2
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	230mA
	Maximum Drain Source Voltage Vds	60V
	Series	SIPMOS
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	6Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	360mW
	Forward Voltage Vf	0.83V
	Typical Gate Charge Qg @ Vgs	1nC
	Maximum Operating Temperature	150°C
	Length	2.9mm
	Standards/Approvals	No
	Height	1mm
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 230mA
	Maximum Drain Source Voltage Vds 60V
	Series SIPMOS
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 6Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 360mW
	Forward Voltage Vf 0.83V
	Typical Gate Charge Qg @ Vgs 1nC
	Maximum Operating Temperature 150°C
	Length 2.9mm
	Standards/Approvals No
	Height 1mm
	Automotive Standard AEC-Q101

Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 3.5Ω Maximum Drain Source Resistance - BSS138NH6433XTMA1

This MOSFET is a compact N-channel transistor designed for low-current switching in surface-mount applications. It operates across a wide temperature range, making it suitable for environments that demand extended thermal tolerance. The device is built for use where controlled enhancement-mode switching and modest power handling are required.

Features and Benefits:

• 60V drain voltage enables use in intermediate-voltage systems
• 3.5Ω low Rds(on) reduces conduction losses in small-signal circuits
• 230mA continuous drain current supports low-power switching loads
• 1nC typical gate charge allows fast gate transitions with minimal drive energy
• 360mW power dissipation helps manage thermal loading in constrained designs
• 20V maximum gate rating protects against excessive drive voltages

Applications

• Suitable for automotive sensor signal switching
• Ideal for handheld instrument power management
• Used with control logic in telematics modules
• Can be used for load switching in battery-operated devices
• Suitable for general-purpose small-signal switching on PCBs

What mounting style is required for this component?

It uses a SOT-23 package intended for surface-mount placement on printed circuit assemblies.

How does it cope with elevated operating temperatures?

The device is specified to function from -55°C up to 150°C, permitting use in high-temperature environments with appropriate thermal design.

What gate drive considerations should be observed?

Keep gate voltage within ±20V to avoid overstressing the gate oxide and ensure gate-drive circuits supply sufficient current for the 1nC typical gate charge.

Is this device suitable for high-current power stages?

It is intended for small-signal and low-current switching

the 230mA continuous drain current and 3.5Ω Rds(on) limit its suitability for high-current power stages.