MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.


These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220.


What are depletion and enhancement modes?


MOSFET transistors have two modes; depletion and enhancement.
Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied.
Enhancement mode MOSFETs are similar to a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.


How do MOSFETs work?


The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease.
Power MOSFETs are similar to standard MOSFETs but they are designed to handle a higher level of power.


N-Channel vs. P-Channel MOSFETs


MOSFETs are made of p-type or n-type doped silicon.


  • N-Channel MOSFETS contain additional electrons which are free to move around. They are the more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.


  • P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

Where are MOSFETs used?


MOSFETs are found within many applications, such as microprocessors and other memory components. MOSFET transistors are most commonly used as a voltage-controlled switch within circuits.



Looking for MOSFET Drivers?


...
Voir plus Voir moins

Filtres

Afficher 1 - 20 des 10647 produits
Nombre de résultats par page
Description Prix Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Maximum Gate Threshold Voltage Mounting Type Minimum Gate Threshold Voltage Pin Count Maximum Gate Source Voltage Channel Mode Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
N° de stock RS 671-0722
Référence fabricantFDS8884
0,327 €
Each (In a Pack of 10)
Unité
N 8.5 A 30 V 23 mΩ SOIC - Surface Mount 1.2V 8 -20 V, +20 V Enhancement 2.5 W Single 1
N° de stock RS 166-2619
Référence fabricantFDS8884
0,134 €
Each (On a Reel of 2500)
Unité
N 8.5 A 30 V 23 mΩ SOIC - Surface Mount 1.2V 8 -20 V, +20 V Enhancement 2.5 W Single 1
N° de stock RS 671-1062
Référence fabricantFQT7N10LTF
0,452 €
Each (In a Pack of 5)
Unité
N 1.7 A 100 V 350 mΩ SOT-223 - Surface Mount 1V 3 + Tab -20 V, +20 V Enhancement 2 W Single 1
N° de stock RS 753-3021
Référence fabricantIPD70N10S3L12ATMA1
MarqueInfineon
1,358 €
Each (In a Pack of 5)
Unité
N 70 A 100 V 15.2 mΩ DPAK (TO-252) 2.4V Surface Mount 1.2V 3 -20 V, +20 V Enhancement 125 W Single 1
N° de stock RS 165-7524
Référence fabricantIPD70N10S3L12ATMA1
MarqueInfineon
0,69 €
Each (On a Reel of 2500)
Unité
N 70 A 100 V 15.2 mΩ DPAK (TO-252) 2.4V Surface Mount 1.2V 3 -20 V, +20 V Enhancement 125 W Single 1
N° de stock RS 166-1755
Référence fabricantFQT7N10LTF
0,147 €
Each (On a Reel of 4000)
Unité
N 1.7 A 100 V 350 mΩ SOT-223 - Surface Mount 1V 3 + Tab -20 V, +20 V Enhancement 2 W Single 1
N° de stock RS 708-5134
Référence fabricantIRF510PBF
MarqueVishay
0,701 €
Each (In a Pack of 10)
Unité
N 5.6 A 100 V 540 mΩ TO-220AB - Through Hole 2V 3 -20 V, +20 V Enhancement 43 W Single 1
N° de stock RS 919-0023
Référence fabricantIRF510PBF
MarqueVishay
0,67 €
Each (In a Tube of 50)
Unité
N 5.6 A 100 V 540 mΩ TO-220AB - Through Hole 2V 3 -20 V, +20 V Enhancement 43 W Single 1
N° de stock RS 124-1694
Référence fabricantBSS138
0,034 €
Each (On a Reel of 3000)
Unité
N 220 mA 50 V 3.5 Ω SOT-23 1.5V Surface Mount 0.8V 3 -20 V, +20 V Enhancement 360 mW Single 1
N° de stock RS 671-0324
Référence fabricantBSS138
0,164 €
Each (In a Pack of 10)
Unité
N 220 mA 50 V 3.5 Ω SOT-23 1.5V Surface Mount 0.8V 3 -20 V, +20 V Enhancement 360 mW Single 1
N° de stock RS 124-1745
Référence fabricantBS170
0,09 €
Each (In a Bag of 1000)
Unité
N 500 mA 60 V 5 Ω TO-92 3V Through Hole 0.8V 3 -20 V, +20 V Enhancement 830 mW Single 1
N° de stock RS 671-4736
Référence fabricantBS170
0,284 €
Each (In a Pack of 10)
Unité
N 500 mA 60 V 5 Ω TO-92 3V Through Hole 0.8V 3 -20 V, +20 V Enhancement 830 mW Single 1
N° de stock RS 541-1124
Référence fabricantIRFBE30PBF
MarqueVishay
1,39 €
Each
Unité
N 4.1 A 800 V 3 Ω TO-220AB - Through Hole 2V 3 -20 V, +20 V Enhancement 125 W Single 1
N° de stock RS 178-0818
Référence fabricantIRFBE30PBF
MarqueVishay
1,156 €
Each (In a Tube of 50)
Unité
N 4.1 A 800 V 3 Ω TO-220AB - Through Hole 2V 3 -20 V, +20 V Enhancement 125 W Single 1
N° de stock RS 145-9508
Référence fabricantIRF5806TRPBF
MarqueInfineon
0,137 €
Each (On a Reel of 3000)
Unité
P 4 A 20 V 147 mΩ TSOP 1.2V Surface Mount 0.45V 6 -20 V, +20 V Enhancement 2 W Single 1
N° de stock RS 830-3509
Référence fabricantIRF5806TRPBF
MarqueInfineon
0,34 €
Each (In a Pack of 25)
Unité
P 4 A 20 V 147 mΩ TSOP 1.2V Surface Mount 0.45V 6 -20 V, +20 V Enhancement 2 W Single 1
N° de stock RS 919-4769
Référence fabricantIRFZ44NPBF
MarqueInfineon
0,811 €
Each (In a Tube of 50)
Unité
N 49 A 55 V 17.5 mΩ TO-220AB 4V Through Hole 2V 3 -20 V, +20 V Enhancement 94 W Single 1
N° de stock RS 829-3332
Référence fabricantDN2535N3-G
MarqueMicrochip
0,572 €
Each (In a Pack of 10)
Unité
N 120 mA 350 V 25 Ω TO-92 3.5V Through Hole - 3 -20 V, +20 V Depletion 1 W Single 1
N° de stock RS 759-9128
Référence fabricantFDL100N50F
10,27 €
Each
Unité
N 100 A 500 V 55 mΩ TO-264 - Through Hole 3V 3 -30 V, +30 V Enhancement 2.5 kW Single 1
N° de stock RS 124-1331
Référence fabricantFDL100N50F
9,055 €
Each (In a Tube of 25)
Unité
N 100 A 500 V 55 mΩ TO-264 - Through Hole 3V 3 -30 V, +30 V Enhancement 2.5 kW Single 1