Infineon OptiMOS 3 Type N-Channel MOSFET, 120 A, 75 V Enhancement, 3-Pin TO-263 IPB020NE7N3GATMA1

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25,89 €

(TVA exclue)

31,325 €

(TVA incluse)

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Prix par unité
le paquet*
5 - 55,178 €25,89 €
10 - 204,92 €24,60 €
25 - 454,712 €23,56 €
50 - 1204,402 €22,01 €
125 +4,144 €20,72 €

*Prix donné à titre indicatif

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N° de stock RS:
825-9213
Référence fabricant:
IPB020NE7N3GATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-263

Series

OptiMOS 3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

300W

Forward Voltage Vf

0.9V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

155nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

9.45 mm

Standards/Approvals

No

Length

10.31mm

Height

4.57mm

Automotive Standard

No

Statut RoHS non applicable

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS

Optimized technology for DC/DC converters

Qualified according to JEDEC1) for target applications

N-channel, logic level

Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

Pb-free plating

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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