Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V Enhancement, 3-Pin IPAK IRFU5305PBF

N° de stock RS:: 542-9951
Numéro d'article Distrelec:: 303-41-378
Référence fabricant:: IRFU5305PBF
Fabricant:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V Enhancement, 3-Pin IPAK IRFU5305PBF

Sous-total (1 unité)*

1,56 €

(TVA exclue)

1,89 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

Plus 5 unité(s) expédiée(s) à partir du 12 octobre 2026
Plus 2 974 unité(s) expédiée(s) à partir du 19 octobre 2026

Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité	Prix par unité
1 +	1,56 €

*Prix donné à titre indicatif

N° de stock RS:: 542-9951
Numéro d'article Distrelec:: 303-41-378
Référence fabricant:: IRFU5305PBF
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	31A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	IPAK
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	65mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	63nC
	Forward Voltage Vf	-1.3V
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Maximum Power Dissipation Pd	110W
	Maximum Operating Temperature	175°C
	Height	6.1mm
	Length	6.6mm
	Width	2.3mm
	Standards/Approvals	No
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 31A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type IPAK
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 65mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 63nC
	Forward Voltage Vf -1.3V
	Maximum Gate Source Voltage Vgs -20V, +20V
	Maximum Power Dissipation Pd 110W
	Maximum Operating Temperature 175°C
	Height 6.1mm
	Length 6.6mm
	Width 2.3mm
	Standards/Approvals No
	Automotive Standard No

Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRFU5305PBF

This MOSFET is engineered for efficiency and reliability across diverse electronic applications. The advanced processing techniques incorporated enable low resistance per silicon area, making it suitable for high-performance circuit designs. Its robust capabilities accommodate a wide array of drain current and voltage specifications, ensuring optimal use in automation and electrical systems.

Features & Benefits

• High current handling capability of up to 31A

• Operates effectively in enhancement mode for improved performance

• Low static drain-to-source on-resistance for efficient energy consumption

• Broad gate-to-source voltage range of ±20V for versatile control

• Can withstand power dissipation levels up to 110W

• Compact TO-251 IPAK package facilitates space-efficient installation

Applications

• Ideal for power management in consumer electronics

• Employed in renewable energy systems for efficient control

• Suitable for power in electric vehicles

• Utilised in high-frequency switching power supplies for enhanced performance

What operating temperature range can be maintained?

The component can operate within -55°C to +175°C, suitable for various environments.

How does installation affect performance?

Proper installation in space-constrained applications optimises heat dissipation, thus enhancing reliability and performance.

What should be considered for heat management during use?

Ensuring adequate cooling methods is crucial due to its maximum power dissipation of 110 W when operating at high drain currents.

What type of circuit designs benefit from its specifications?

The low on-resistance and high current rating make it well-suited for designs focused on efficiency and minimising energy losses in applications such as motor control and power supplies.

Can it be used in parallel configurations?

Yes, it is suitable for parallel circuits; however, balancing methods should be considered to ensure uniform current distribution across devices.