STMicroelectronics SCT Type N-Channel MOSFET, 55 A, 650 V Enhancement, 7-Pin H2PAK-7 SCT018H65G3AG

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Sous-total (1 bobine de 1000 unités)*

23 238,00 €

(TVA exclue)

28 118,00 €

(TVA incluse)

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la bobine*
1000 +23,238 €23 238,00 €

*Prix donné à titre indicatif

N° de stock RS:
215-225
Référence fabricant:
SCT018H65G3AG
Fabricant:
STMicroelectronics
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Marque

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

650V

Series

SCT

Package Type

H2PAK-7

Mount Type

Through Hole

Pin Count

7

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

79.4nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

385W

Maximum Gate Source Voltage Vgs

22 V

Maximum Operating Temperature

75°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Pays d'origine :
CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

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