Infineon SIPMOS Type P-Channel MOSFET, 11.3 A, 100 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 823-5560
- Numéro d'article Distrelec:
- 304-44-485
- Référence fabricant:
- SPP15P10PLHXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
11,04 €
(TVA exclue)
13,36 €
(TVA incluse)
Ajouter 35 unités pour bénéficier d'une livraison gratuite
Temporairement en rupture de stock
- 500 unité(s) expédiée(s) à partir du 02 avril 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 2,208 € | 11,04 € |
| 50 - 120 | 1,988 € | 9,94 € |
| 125 - 245 | 1,856 € | 9,28 € |
| 250 - 495 | 1,724 € | 8,62 € |
| 500 + | 1,616 € | 8,08 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 823-5560
- Numéro d'article Distrelec:
- 304-44-485
- Référence fabricant:
- SPP15P10PLHXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 11.3A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | SIPMOS | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 270mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 128W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Forward Voltage Vf | -0.96V | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.95mm | |
| Width | 4.57 mm | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 11.3A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series SIPMOS | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 270mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 128W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Forward Voltage Vf -0.96V | ||
Maximum Operating Temperature 175°C | ||
Height 15.95mm | ||
Width 4.57 mm | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- MY
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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