Infineon SIPMOS Type P-Channel MOSFET, 11.3 A, 100 V Enhancement, 3-Pin TO-220 SPP15P10PLHXKSA1

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Sous-total (1 tube de 50 unités)*

79,45 €

(TVA exclue)

96,15 €

(TVA incluse)

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Temporairement en rupture de stock
  • 500 unité(s) expédiée(s) à partir du 26 mars 2026
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Unité
Prix par unité
le tube*
50 +1,589 €79,45 €

*Prix donné à titre indicatif

N° de stock RS:
165-6694
Référence fabricant:
SPP15P10PLHXKSA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

11.3A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220

Series

SIPMOS

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

270mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

128W

Forward Voltage Vf

-0.96V

Typical Gate Charge Qg @ Vgs

47nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

15.95mm

Standards/Approvals

No

Width

4.57 mm

Length

10.36mm

Automotive Standard

AEC-Q101

Pays d'origine :
MY

Infineon SIPMOS® P-Channel MOSFETs


The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)

· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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