Infineon SIPMOS Type P-Channel MOSFET, 170 mA, 60 V Enhancement, 3-Pin SOT-23 BSS84PH6327XTSA2

N° de stock RS:: 892-2217
Référence fabricant:: BSS84PH6327XTSA2
Fabricant:: Infineon

Infineon SIPMOS Type P-Channel MOSFET, 170 mA, 60 V Enhancement, 3-Pin SOT-23 BSS84PH6327XTSA2

Sous-total (1 paquet de 250 unités)*

27,50 €

(TVA exclue)

32,50 €

(TVA incluse)

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Unité	Prix par unité	le paquet*
250 +	0,11 €	27,50 €

*Prix donné à titre indicatif

N° de stock RS:: 892-2217
Référence fabricant:: BSS84PH6327XTSA2
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	170mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-23
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	12Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	360mW
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	1nC
	Maximum Operating Temperature	150°C
	Height	0.9mm
	Length	2.9mm
	Width	1.3mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 170mA
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-23
	Series SIPMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 12Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 360mW
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 1nC
	Maximum Operating Temperature 150°C
	Height 0.9mm
	Length 2.9mm
	Width 1.3mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Infineon SIPMOS Series MOSFET, 60V Drain Source Voltage, 170mA Continuous Drain Current - BSS84PH6327XTSA2

This MOSFET is a P-channel transistor intended for low-power switching in surface-mounted electronic assemblies. It operates across a wide temperature span suitable for challenging environments and is designed for compact board-level installations where a P-channel device with moderate voltage rating is required.

Features and Benefits:

• 60V drain withstand provides high-voltage switching capability
• 12Ω RDS(on) enables controlled conduction for low-current paths
• 1nC typical gate charge reduces drive energy and switching losses
• 170mA continuous drain current supports sustained low-current loads
• 360mW maximum dissipation permits modest power handling in small packages

Applications

• Suitable for battery protection and reverse-polarity switching
• Ideal for low-current load switching in automotive modules
• Used with logic-level drivers in portable instrumentation
• Can be used for power-rail selection in compact control boards

What gate voltage limits should designers observe?

The gate-source rating is ±20V, so driver circuits must keep Vgs within that range to avoid device damage.

How does thermal performance influence PCB layout?

With 360mW dissipation, designers should provide adequate copper area and thermal vias to spread heat from the SOT-23 footprint.

Is this device suitable for automotive qualification?

The component meets AEC-Q101 standards, indicating it conforms to automotive-grade stress and screening levels.

What switching behaviour can be expected at high ambient temperatures?

The transistor remains operational from -55°C to 150°C, but RDS(on) and current capability should be verified at the upper temperature extreme for reliable operation.