Infineon SIPMOS Type P-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-220 SPP80P06PHXKSA1
- N° de stock RS:
- 914-0194
- Numéro d'article Distrelec:
- 304-37-850
- Référence fabricant:
- SPP80P06PHXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
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20,76 €
(TVA exclue)
25,12 €
(TVA incluse)
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 4,152 € | 20,76 € |
| 25 - 45 | 3,736 € | 18,68 € |
| 50 + | 3,488 € | 17,44 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 914-0194
- Numéro d'article Distrelec:
- 304-37-850
- Référence fabricant:
- SPP80P06PHXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIPMOS | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 340W | |
| Typical Gate Charge Qg @ Vgs | 115nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | -1.6V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4.57mm | |
| Height | 15.95mm | |
| Length | 10.36mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIPMOS | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 340W | ||
Typical Gate Charge Qg @ Vgs 115nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf -1.6V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4.57mm | ||
Height 15.95mm | ||
Length 10.36mm | ||
Automotive Standard No | ||
Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 80A Maximum Continuous Drain Current - SPP80P06PHXKSA1
This MOSFET is a power switching device designed for high-current, high-temperature applications. It operates as a p-channel enhancement transistor in a through-hole TO-220 package and is suitable for power conversion and switching tasks where robust thermal tolerance is required. The component supports gate-driven control for efficient conduction and is intended for use in systems demanding substantial continuous drain current and elevated operating temperatures.
Features and Benefits:
• 60V drain rating enables medium-voltage switching capability
• 80A continuous drain current supports high-current loads
• 23mΩ low Rds(on) minimises conduction losses
• 115nC typical gate charge balances switching and drive energy
• 340W maximum power dissipation permits substantial thermal loading
• Vgs±20V gate tolerance allows flexible gate-drive margins
• 80A continuous drain current supports high-current loads
• 23mΩ low Rds(on) minimises conduction losses
• 115nC typical gate charge balances switching and drive energy
• 340W maximum power dissipation permits substantial thermal loading
• Vgs±20V gate tolerance allows flexible gate-drive margins
Applications
• Suitable for high-current DC-DC converters in power supplies
• Used for synchronous rectification in server supply rails
• Ideal for motor-drive stages requiring P-channel switching
• Can be used for battery-protection and load-switch circuits
• Suitable for thermally stressed environments up to 175°C
• Used for synchronous rectification in server supply rails
• Ideal for motor-drive stages requiring P-channel switching
• Can be used for battery-protection and load-switch circuits
• Suitable for thermally stressed environments up to 175°C
What temperature range can it withstand in operation?
The device is rated to operate from -55°C up to 175°C, allowing use in high-temperature systems.
How should heat be managed when running near maximum dissipation?
To handle the 340W limit, attach an appropriate heatsink to the TO-220 tab and ensure adequate airflow to reduce junction temperature.
What gate-drive considerations arise from the gate charge value?
With a typical gate charge of 115nC, drivers must supply sufficient current for the desired switching speed while accounting for increased drive energy and potential switching losses.
How does the device’s polarity affect circuit topology choices?
As a P-channel enhancement device, it is typically deployed on the high side of power paths where the gate voltage can be pulled lower than the source for turn-on.
Liens connexes
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