Infineon SIPMOS Type P-Channel MOSFET, 330 mA, 60 V Enhancement, 3-Pin SOT-23

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270,00 €

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330,00 €

(TVA incluse)

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Prix par unité
la bobine*
3000 - 30000,09 €270,00 €
6000 - 120000,086 €258,00 €
15000 +0,08 €240,00 €

*Prix donné à titre indicatif

N° de stock RS:
145-8801
Référence fabricant:
BSS83PH6327XTSA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

330mA

Maximum Drain Source Voltage Vds

60V

Series

SIPMOS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

360mW

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

2.38nC

Forward Voltage Vf

-1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

2.9mm

Height

1mm

Width

1.3 mm

Automotive Standard

AEC-Q101

Infineon SIPMOS® P-Channel MOSFETs


The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A Plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)

· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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