Infineon SIPMOS Type P-Channel MOSFET, 150 mA, 60 V Enhancement, 3-Pin SC-70 BSS84PWH6327XTSA1
- N° de stock RS:
- 145-8835
- Référence fabricant:
- BSS84PWH6327XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 3000 unités)*
105,00 €
(TVA exclue)
126,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 6 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,035 € | 105,00 € |
| 6000 - 12000 | 0,033 € | 99,00 € |
| 15000 + | 0,031 € | 93,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 145-8835
- Référence fabricant:
- BSS84PWH6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 150mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SC-70 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 25Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Forward Voltage Vf | -1.12V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 300mW | |
| Maximum Operating Temperature | 150°C | |
| Length | 2mm | |
| Height | 0.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 150mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SC-70 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 25Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Forward Voltage Vf -1.12V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 300mW | ||
Maximum Operating Temperature 150°C | ||
Length 2mm | ||
Height 0.8mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 150mA Maximum Continuous Drain Current - BSS84PWH6327XTSA1
This MOSFET is a P‑channel enhancement device designed for compact surface‑mount applications in automotive and industrial contexts. It controls and switches small currents at moderate voltages while operating across a wide temperature range suitable for demanding environments.
Features and Benefits:
• 60V drain rating enables moderate‑voltage switching capacity
• 150mA continuous drain current supports low‑power circuits
• 25Ω maximum Rds reduces losses in light‑load switching
• 300mW power dissipation allows sustained thermal handling
• 20V gate tolerance permits flexible gate‑drive levels
• 1nC typical gate charge yields fast, low‑energy switching
• 150mA continuous drain current supports low‑power circuits
• 25Ω maximum Rds reduces losses in light‑load switching
• 300mW power dissipation allows sustained thermal handling
• 20V gate tolerance permits flexible gate‑drive levels
• 1nC typical gate charge yields fast, low‑energy switching
Applications
• Suitable for load switching in automotive control modules
• Ideal for level‑shifting in sensor interface circuits
• Used with battery management for low‑current paths
• Can be used for protection switching in telematics units
• Appropriate for compact consumer electronics power paths
• Ideal for level‑shifting in sensor interface circuits
• Used with battery management for low‑current paths
• Can be used for protection switching in telematics units
• Appropriate for compact consumer electronics power paths
What environmental range can it tolerate in deployed systems?
It operates from -55°C up to 150°C, covering extended cold‑start and high‑temperature under‑bonnet conditions.
Which package suits high‑density PCB layouts?
It comes in an SC‑70 three‑pin surface‑mount package measuring 1.25x2mm footprint for tight component spacing.
How does the gate charge affect drive requirements?
With a typical Qg of 1nC, standard low‑current drivers can switch it quickly with minimal energy consumption.
Is it compatible with automotive reliability standards?
It meets AEC‑Q101 qualification appropriate for many vehicle electronic subsystems.
Liens connexes
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SC-70
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SC-70
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SC-70 BSS138WH6433XTMA1
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SC-59
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SC-59 BSR315PH6327XTSA1
- Infineon OptiMOS P Type P-Channel MOSFET 20 V Enhancement, 3-Pin SC-70
- Infineon OptiMOS P Type P-Channel MOSFET 20 V Enhancement, 3-Pin SC-70 BSS223PWH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223