Infineon SIPMOS Type P-Channel MOSFET, 190 mA, 250 V Enhancement, 3-Pin SOT-89

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Sous-total (1 bobine de 1000 unités)*

190,00 €

(TVA exclue)

230,00 €

(TVA incluse)

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  • 1 000 unité(s) expédiée(s) à partir du 05 février 2026
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Unité
Prix par unité
la bobine*
1000 +0,19 €190,00 €

*Prix donné à titre indicatif

N° de stock RS:
145-9451
Référence fabricant:
BSS192PH6327FTSA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

190mA

Maximum Drain Source Voltage Vds

250V

Package Type

SOT-89

Series

SIPMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

20Ω

Channel Mode

Enhancement

Forward Voltage Vf

-1.1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

4.9nC

Maximum Power Dissipation Pd

1W

Maximum Operating Temperature

150°C

Width

2.5 mm

Length

4.5mm

Standards/Approvals

No

Height

1.5mm

Automotive Standard

AEC-Q101

Infineon SIPMOS® P-Channel MOSFETs


The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A Plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)

· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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