Infineon SIPMOS Type P-Channel MOSFET, 190 mA, 250 V Enhancement, 3-Pin SOT-89

N° de stock RS:: 145-9451
Référence fabricant:: BSS192PH6327FTSA1
Fabricant:: Infineon

Infineon SIPMOS Type P-Channel MOSFET, 190 mA, 250 V Enhancement, 3-Pin SOT-89

Sous-total (1 bobine de 1000 unités)*

148,00 €

(TVA exclue)

179,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 15 février 2027

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Unité	Prix par unité	la bobine*
1000 +	0,148 €	148,00 €

*Prix donné à titre indicatif

N° de stock RS:: 145-9451
Référence fabricant:: BSS192PH6327FTSA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	190mA
	Maximum Drain Source Voltage Vds	250V
	Package Type	SOT-89
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	20Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1W
	Forward Voltage Vf	-1.1V
	Typical Gate Charge Qg @ Vgs	4.9nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	4.5mm
	Height	1.5mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 190mA
	Maximum Drain Source Voltage Vds 250V
	Package Type SOT-89
	Series SIPMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 20Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1W
	Forward Voltage Vf -1.1V
	Typical Gate Charge Qg @ Vgs 4.9nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 4.5mm
	Height 1.5mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Infineon SIPMOS Series MOSFET, 250V Maximum Drain Source Voltage, 190mA Maximum Continuous Drain Current - BSS192PH6327FTSA1

This MOSFET is a P‑channel device designed for surface‑mount power switching in demanding electrical environments. It functions as an enhancement‑mode transistor suited to applications requiring controlled high‑voltage switching and low continuous current handling, operating across a wide temperature span for use in regulated systems and automotive electronics.

Features and Benefits:

• 250V drain‑source rating enables high‑voltage switching capability
• 190mA continuous drain current supports low‑current load control
• 20Ω maximum Rds reduces conduction loss in low‑current circuits
• 4.9nC typical gate charge at Vgs ensures predictable switching behaviour
• 20V gate‑source limit allows straightforward gate drive designs
• 1W maximum power dissipation manages thermal constraints in compact layouts

Applications

• Suitable for automotive sensor power path switching
• Ideal for low‑power reverse polarity protection circuits
• Used with high‑voltage battery management subsystems
• Can be used for small relay replacement in control modules
• Appropriate for surface‑mount power distribution on compact boards

What thermal range can it tolerate in harsh conditions?

It operates reliably from -55°C up to 150°C to suit extended temperature environments.

How many pins does the package present for PCB layout?

The component is supplied with three pins, enabling standard SOT‑89 footprint routing.

Which package style should designers expect for assembly?

It arrives in a SOT‑89 surface‑mount package tailored for compact board designs.

Is the device rated for automotive qualification standards?

It conforms to AEC‑Q101, meeting industry stress screening for automotive use.