Infineon SIPMOS Type P-Channel MOSFET, 430 mA, 250 V Enhancement, 4-Pin SOT-223

N° de stock RS:: 911-4969
Référence fabricant:: BSP317PH6327XTSA1
Fabricant:: Infineon

Infineon SIPMOS Type P-Channel MOSFET, 430 mA, 250 V Enhancement, 4-Pin SOT-223

Sous-total (1 bobine de 1000 unités)*

222,00 €

(TVA exclue)

269,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

4 000 unité(s) expédiée(s) à partir du 31 décembre 2026

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Unité	Prix par unité	la bobine*
1000 +	0,222 €	222,00 €

*Prix donné à titre indicatif

N° de stock RS:: 911-4969
Référence fabricant:: BSP317PH6327XTSA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	430mA
	Maximum Drain Source Voltage Vds	250V
	Package Type	SOT-223
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	5Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	1.8W
	Typical Gate Charge Qg @ Vgs	11.6nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	6.5mm
	Height	1.6mm
	Width	3.5mm
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 430mA
	Maximum Drain Source Voltage Vds 250V
	Package Type SOT-223
	Series SIPMOS
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 5Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 1.8W
	Typical Gate Charge Qg @ Vgs 11.6nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 6.5mm
	Height 1.6mm
	Width 3.5mm
	Automotive Standard AEC-Q101

Pays d'origine :: DE

Infineon SIPMOS Series MOSFET, 250V Maximum Drain Source Voltage, 430mA Maximum Continuous Drain Current - BSP317PH6327XTSA1

This MOSFET is a P‑channel enhancement device designed for high‑voltage switching in surface‑mount assemblies. It operates across a wide thermal span suitable for industrial and automotive environments and is supplied in a SOT‑223 package for straightforward board mounting.

Features and Benefits:

• 250V drain‑source rating enables high‑voltage switching capability
• 5Ω maximum Rds minimises conduction losses in low‑current circuits
• 430mA continuous drain current supports steady‑state loads
• 11.6nC typical gate charge reduces switching energy loss
• 20V gate threshold allows standard gate drive voltages
• AEC‑Q101 qualification meets automotive component stress levels

Applications

• Suitable for automotive power distribution and load switching
• Ideal for high‑voltage reverse battery protection circuits
• Used with accessory power modules in vehicles and machinery
• Can be used for industrial control and signal switching
• Appropriate for compact surface‑mount power conversion boards

What mounting considerations apply for thermal performance?

The SOT‑223 surface‑mount format provides a thermal path through PCB copper

adequate board heatsinking increases the 1.8W power dissipation capability under elevated ambient temperatures.

How does it behave in cold and hot environments?

It is specified to function from -55°C up to 150°C, maintaining device operation across typical automotive and industrial temperature ranges.

What gate drive constraints should designers observe?

Gate‑to‑source voltage must not exceed 20V

design gate drivers accordingly and include protection to prevent exceeding this limit.

Are there switching trade‑offs to consider?

The relatively low gate charge of 11.6nC balances switching speed and drive current, so driver selection should match the desired trade‑off between transition speed and EMI.