Infineon OptiMOS P Type P-Channel MOSFET, 1.18 A, 20 V Enhancement, 3-Pin SOT-23
- N° de stock RS:
- 827-0134
- Référence fabricant:
- BSS215PH6327XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 250 unités)*
31,75 €
(TVA exclue)
38,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- 7 250 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 250 - 250 | 0,127 € | 31,75 € |
| 500 - 1000 | 0,095 € | 23,75 € |
| 1250 - 2250 | 0,089 € | 22,25 € |
| 2500 - 6000 | 0,082 € | 20,50 € |
| 6250 + | 0,076 € | 19,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 827-0134
- Référence fabricant:
- BSS215PH6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.18A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | OptiMOS P | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 500mW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.6nC | |
| Forward Voltage Vf | -1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 2.9mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.18A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series OptiMOS P | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 500mW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.6nC | ||
Forward Voltage Vf -1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 2.9mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS P Series MOSFET, 20V Maximum Drain Source Voltage, 280mΩ Maximum Drain Source Resistance - BSS215PH6327XTSA1
This MOSFET is a P-channel enhancement transistor intended for surface-mount applications in demanding electronic systems. It provides controlled switching functionality for low-voltage circuits, operating across a wide ambient range to suit automotive and industrial conditions, and is housed in a compact SOT-23 package for space-constrained designs.
Features and Benefits:
• Low on-resistance of 280mΩ reduces conduction losses and heatsinking needs
• Maximum drain current 1.18A supports moderate load switching capability
• Drain-source voltage rating of 20V enables safe operation in 12V systems
• Typical gate charge 3.6nC allows faster switching with lower drive energy
• Power dissipation 500mW limits thermal stress in low-power designs
• Rated gate-source tolerance 12V ensures resilience to gate overdrive
• Maximum drain current 1.18A supports moderate load switching capability
• Drain-source voltage rating of 20V enables safe operation in 12V systems
• Typical gate charge 3.6nC allows faster switching with lower drive energy
• Power dissipation 500mW limits thermal stress in low-power designs
• Rated gate-source tolerance 12V ensures resilience to gate overdrive
Applications
• Suitable for high-side switching in battery management systems
• Ideal for load disconnect in automotive auxiliary circuits
• Used for DC-DC converter control in compact power supplies
• Can be used for reverse polarity protection in 12V installations
• Appropriate for signal-level switching in sensor interface modules
• Ideal for load disconnect in automotive auxiliary circuits
• Used for DC-DC converter control in compact power supplies
• Can be used for reverse polarity protection in 12V installations
• Appropriate for signal-level switching in sensor interface modules
What temperature range can it tolerate during operation?
It is specified to function from -55°C up to 150°C, accommodating extreme thermal environments.
How is the device packaged for assembly on PCBs?
It is supplied in a SOT-23 surface-mount package designed for automated PCB placement and soldering.
What gate drive considerations should I account for?
The device accepts up to 12V between gate and source
ensure gate-drive circuitry limits excursions within this threshold.
Is the device suitable for automotive qualification?
It meets AEC‑Q101 standards appropriate for many automotive electronic designs.
Liens connexes
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