Références fabricant

Infineon OptiMOS P Type P-Channel MOSFET, 1.6 A, 30 V Enhancement, 3-Pin SOT-23

N° de stock RS:: 165-6823
Référence fabricant:: BSS308PEH6327XTSA1
Fabricant:: Infineon

Infineon OptiMOS P Type P-Channel MOSFET, 1.6 A, 30 V Enhancement, 3-Pin SOT-23

Actuellement indisponible

Désolés, nous ne savons pas quand ce produit sera réapprovisionné.

N° de stock RS:: 165-6823
Référence fabricant:: BSS308PEH6327XTSA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	1.6A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-23
	Series	OptiMOS P
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	130mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-0.8V
	Typical Gate Charge Qg @ Vgs	5nC
	Maximum Power Dissipation Pd	500mW
	Maximum Operating Temperature	150°C
	Length	2.9mm
	Height	1mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 1.6A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-23
	Series OptiMOS P
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 130mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -0.8V
	Typical Gate Charge Qg @ Vgs 5nC
	Maximum Power Dissipation Pd 500mW
	Maximum Operating Temperature 150°C
	Length 2.9mm
	Height 1mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Pays d'origine :: MY

Infineon OptiMOS P Series MOSFET, 30V Maximum Drain Source Voltage, 130mΩ Maximum Drain Source Resistance - BSS308PEH6327XTSA1

This MOSFET is a P-channel enhancement device designed for surface-mount switching and control in compact electronic assemblies. It operates across a wide temperature range suitable for demanding environments and is built to function where low-voltage, moderate-current switching is required. The device is supplied in a SOT-23 package and is compatible with automotive-grade applications.

Features and Benefits:

• Low on-resistance of 130 mΩ reduces conduction losses
• Rated for 30V drain-source withstand for low-voltage systems
• Continuous drain current of 1.6A supports moderate loads
• Typical gate charge of 5 nC enables faster gate switching
• Maximum gate-source voltage of 20V allows robust drive margins
• Power dissipation capacity of 500 mW aids thermal management

Applications

• Suitable for load disconnect in 12V automotive systems
• Ideal for battery protection and power-path control
• Used with DC-DC converter input-stage switching
• Can be used for signal-level power switching in modules
• Appropriate for compact surface-mount power boards

What thermal extremes can it tolerate in operation?

It is specified to operate down to -55 °C and up to 150 °C, allowing use in environments with wide thermal variation.

What package and mounting method does it use?

It is supplied in a SOT-23 package designed for surface mounting on PCB assemblies.

How does the device behave regarding gate-drive design?

With a maximum VGS rating of 20V and a typical gate charge of 5 nC, it requires modest drive capability and fast gate drivers to achieve rapid switching.

Is the device suitable for automotive qualification requirements?

It conforms to AEC‑Q101 standards, making it acceptable for many automotive electronic designs.

Liens connexes

Soyez le/la premier·ère à être informé de nos nouveautés produits et de nos offres spéciales.

adresse e-mail

Les données personnelles que vous nous fournissez en vous inscrivant à cette liste de diffusion seront traitées conformément à notre politique de confidentialité.