Infineon OptiMOS P Type P-Channel MOSFET, 1.18 A, 20 V Enhancement, 3-Pin SOT-23 BSS215PH6327XTSA1

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264,00 €

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318,00 €

(TVA incluse)

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la bobine*
3000 +0,088 €264,00 €

*Prix donné à titre indicatif

N° de stock RS:
145-9489
Référence fabricant:
BSS215PH6327XTSA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

1.18A

Maximum Drain Source Voltage Vds

20V

Package Type

SOT-23

Series

OptiMOS P

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

500mW

Maximum Gate Source Voltage Vgs

12 V

Typical Gate Charge Qg @ Vgs

3.6nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.1V

Maximum Operating Temperature

150°C

Width

1.3 mm

Length

2.9mm

Height

1mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Pays d'origine :
CN

Infineon OptiMOS™P P-Channel Power MOSFETs


The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode

Avalanche rated

Low switching and conduction power losses

Pb-free lead plating; RoHS compliant

Standard packages

OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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