Infineon OptiMOS P Type P-Channel MOSFET, 1.6 A, 30 V Enhancement, 3-Pin SOT-23 BSS308PEH6327XTSA1
- N° de stock RS:
- 823-5500
- Numéro d'article Distrelec:
- 304-44-428
- Référence fabricant:
- BSS308PEH6327XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 50 unités)*
13,15 €
(TVA exclue)
15,90 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Stock limité
- 300 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 50 - 200 | 0,263 € | 13,15 € |
| 250 - 450 | 0,179 € | 8,95 € |
| 500 - 1200 | 0,168 € | 8,40 € |
| 1250 - 2450 | 0,158 € | 7,90 € |
| 2500 + | 0,092 € | 4,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 823-5500
- Numéro d'article Distrelec:
- 304-44-428
- Référence fabricant:
- BSS308PEH6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS P | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5nC | |
| Forward Voltage Vf | -0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS P | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5nC | ||
Forward Voltage Vf -0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS P Series MOSFET, 30V Maximum Drain Source Voltage, 130mΩ Maximum Drain Source Resistance - BSS308PEH6327XTSA1
This MOSFET is a P-channel enhancement device designed for surface-mount switching and control in compact electronic assemblies. It operates across a wide temperature range suitable for demanding environments and is built to function where low-voltage, moderate-current switching is required. The device is supplied in a SOT-23 package and is compatible with automotive-grade applications.
Features and Benefits:
• Low on-resistance of 130 mΩ reduces conduction losses
• Rated for 30V drain-source withstand for low-voltage systems
• Continuous drain current of 1.6A supports moderate loads
• Typical gate charge of 5 nC enables faster gate switching
• Maximum gate-source voltage of 20V allows robust drive margins
• Power dissipation capacity of 500 mW aids thermal management
• Rated for 30V drain-source withstand for low-voltage systems
• Continuous drain current of 1.6A supports moderate loads
• Typical gate charge of 5 nC enables faster gate switching
• Maximum gate-source voltage of 20V allows robust drive margins
• Power dissipation capacity of 500 mW aids thermal management
Applications
• Suitable for load disconnect in 12V automotive systems
• Ideal for battery protection and power-path control
• Used with DC-DC converter input-stage switching
• Can be used for signal-level power switching in modules
• Appropriate for compact surface-mount power boards
• Ideal for battery protection and power-path control
• Used with DC-DC converter input-stage switching
• Can be used for signal-level power switching in modules
• Appropriate for compact surface-mount power boards
What thermal extremes can it tolerate in operation?
It is specified to operate down to -55 °C and up to 150 °C, allowing use in environments with wide thermal variation.
What package and mounting method does it use?
It is supplied in a SOT-23 package designed for surface mounting on PCB assemblies.
How does the device behave regarding gate-drive design?
With a maximum VGS rating of 20V and a typical gate charge of 5 nC, it requires modest drive capability and fast gate drivers to achieve rapid switching.
Is the device suitable for automotive qualification requirements?
It conforms to AEC‑Q101 standards, making it acceptable for many automotive electronic designs.
Liens connexes
- Infineon OptiMOS P Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS P Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS P Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS P Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 BSS314PEH6327XTSA1
- Infineon OptiMOS P Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 BSS215PH6327XTSA1
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23