Infineon OptiMOS Type N-Channel MOSFET, 540 mA, 55 V Enhancement, 3-Pin SOT-23
- N° de stock RS:
- 827-0027
- Référence fabricant:
- BSS670S2LH6327XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 250 unités)*
38,00 €
(TVA exclue)
46,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- 10 250 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 250 - 250 | 0,152 € | 38,00 € |
| 500 - 1000 | 0,078 € | 19,50 € |
| 1250 - 2250 | 0,073 € | 18,25 € |
| 2500 - 6000 | 0,067 € | 16,75 € |
| 6250 + | 0,062 € | 15,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 827-0027
- Référence fabricant:
- BSS670S2LH6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 540mA | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | OptiMOS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 825mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 360mW | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 1.7nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 540mA | ||
Maximum Drain Source Voltage Vds 55V | ||
Series OptiMOS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 825mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 360mW | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 1.7nC | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS Series MOSFET, 55V Drain Source Voltage, 540mA Continuous Drain Current - BSS670S2LH6327XTSA1
This MOSFET is a small-signal N-channel transistor designed for surface-mounted switching in compact electronic systems. It is intended for applications that require controlled enhancement-mode switching with moderate voltage and current ratings, and is qualified for automotive environments.
Features and Benefits:
• 55V drain tolerance enables higher-voltage switching circuits
• 825mΩ low RDS(on) minimises conduction losses in low-current paths
• 540mA continuous drain current supports steady-state loads
• 1.7nC typical gate charge allows efficient high-speed switching
• 360mW power dissipation suits modest thermal budgets
• -55°C to 150°C operating range accommodates wide-temperature environments
• 825mΩ low RDS(on) minimises conduction losses in low-current paths
• 540mA continuous drain current supports steady-state loads
• 1.7nC typical gate charge allows efficient high-speed switching
• 360mW power dissipation suits modest thermal budgets
• -55°C to 150°C operating range accommodates wide-temperature environments
Applications
• Suitable for automotive sensor-interface switching
• Ideal for DC load switching in compact modules
• Used with battery-management auxiliary circuits
• Can be used for gate drivers in low-power converters
• Used for signal-level switching on mixed-signal boards
• Ideal for DC load switching in compact modules
• Used with battery-management auxiliary circuits
• Can be used for gate drivers in low-power converters
• Used for signal-level switching on mixed-signal boards
What mounting considerations apply to small packages?
The device is supplied in a three-pin SOT-23 package intended for surface mounting, so land-pattern thermal relief and solder fillets should be planned to manage its 360mW dissipation.
How does gate drive affect switching performance?
Driving the gate up to 20V increases conduction margin, while the 1.7nC gate charge determines required driver current for desired rise/fall times.
What is the device’s behaviour under continuous load?
It can carry up to 540mA continuously, provided thermal constraints are respected and ambient conditions allow sufficient heat transfer.
Is this component suitable for automotive qualification needs?
It meets AEC‑Q101 requirements, making it appropriate for automotive electronic applications that require that standard.
Liens connexes
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