Infineon OptiMOS Type N-Channel MOSFET, 540 mA, 55 V Enhancement, 3-Pin SOT-23
- N° de stock RS:
- 827-0027
- Référence fabricant:
- BSS670S2LH6327XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 250 unités)*
40,25 €
(TVA exclue)
48,75 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 10 250 unité(s) expédiée(s) à partir du 03 juin 2026
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 250 - 250 | 0,161 € | 40,25 € |
| 500 - 1000 | 0,082 € | 20,50 € |
| 1250 - 2250 | 0,078 € | 19,50 € |
| 2500 - 6000 | 0,071 € | 17,75 € |
| 6250 + | 0,066 € | 16,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 827-0027
- Référence fabricant:
- BSS670S2LH6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 540mA | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | SOT-23 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 825mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.7nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 360mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 2.9mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 540mA | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type SOT-23 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 825mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.7nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 360mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 2.9mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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