Infineon SIPMOS Type P-Channel MOSFET, 330 mA, 60 V Enhancement, 3-Pin SOT-23 BSS83PH6327XTSA1
- N° de stock RS:
- 753-2857
- Référence fabricant:
- BSS83PH6327XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 50 unités)*
8,90 €
(TVA exclue)
10,75 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 500 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 35 550 unité(s) expédiée(s) à partir du 13 août 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 50 - 200 | 0,178 € | 8,90 € |
| 250 - 450 | 0,121 € | 6,05 € |
| 500 - 1200 | 0,114 € | 5,70 € |
| 1250 - 2450 | 0,105 € | 5,25 € |
| 2500 + | 0,08 € | 4,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 753-2857
- Référence fabricant:
- BSS83PH6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 330mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIPMOS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.38nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.1V | |
| Maximum Power Dissipation Pd | 360mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 2.9mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 330mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIPMOS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.38nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.1V | ||
Maximum Power Dissipation Pd 360mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 2.9mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 3Ω Maximum Drain Source Resistance - BSS83PH6327XTSA1
This p-channel MOSFET is a surface-mount switching transistor designed for compact power-control roles in electronic assemblies. It operates as an enhancement-mode device suitable for low-current switching in systems that demand a wide operating temperature range and compatibility with automotive-grade requirements.
Features and Benefits:
• 60V drain-source rating enables higher-voltage switching applications
• 3Ω maximum Rds reduces conduction losses during on-state
• 330mA continuous drain current supports small-signal switching
• 2.38nC typical gate charge yields faster gate transitions
• 20V maximum gate-source voltage allows flexible gate drive levels
• AEC-Q101 qualification ensures suitability for automotive electronics
• 3Ω maximum Rds reduces conduction losses during on-state
• 330mA continuous drain current supports small-signal switching
• 2.38nC typical gate charge yields faster gate transitions
• 20V maximum gate-source voltage allows flexible gate drive levels
• AEC-Q101 qualification ensures suitability for automotive electronics
Applications
• Suitable for battery-management and load-disconnect circuits
• Ideal for signal switching in automotive sensor interfaces
• Used with low-power regulator and power-rail switching stages
• Can be used for polarity-reverse protection in compact devices
• Suitable for surface-mount prototypes and dense PCB layouts
• Ideal for signal switching in automotive sensor interfaces
• Used with low-power regulator and power-rail switching stages
• Can be used for polarity-reverse protection in compact devices
• Suitable for surface-mount prototypes and dense PCB layouts
What thermal extremes can the device tolerate in real-world use?
It is specified to operate from -55°C up to 150°C, enabling use in both cold-start and high-temperature environments without derating of basic functionality.
How does the package influence board-level assembly and layout?
The SOT-23 surface-mount package is compact and suited to automated placement, permitting tight component spacing and simplified thermal conduction to the PCB.
What power dissipation should designers expect under normal conditions?
The device has a maximum power dissipation of 360mW, which should be accounted for in thermal calculations and thermal pad design to prevent overheating.
How does the component’s gate charge affect switching performance?
A typical gate charge of 2.38nC minimises required gate-drive energy, improving switching speed and reducing driver current for low-frequency or pulse applications.
Liens connexes
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS84PH6327XTSA2
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET 240 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS138NH6327XTSA2
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS138NH6433XTMA1