Infineon SIPMOS Type N-Channel MOSFET, 21 mA, 600 V Enhancement, 3-Pin SOT-23

Offre groupée disponible
Consulter les options de prix de gros

Sous-total (1 bobine de 3000 unités)*

273,00 €

(TVA exclue)

330,00 €

(TVA incluse)

Add to Basket
sélectionner ou taper la quantité
Temporairement en rupture de stock
  • Expédition à partir du 01 janvier 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité
Prix par unité
la bobine*
3000 - 30000,091 €273,00 €
6000 - 120000,087 €261,00 €
15000 +0,081 €243,00 €

*Prix donné à titre indicatif

N° de stock RS:
165-7534
Référence fabricant:
BSS127H6327XTSA2
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21mA

Maximum Drain Source Voltage Vds

600V

Package Type

SOT-23

Series

SIPMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

600Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

0.65nC

Maximum Power Dissipation Pd

500mW

Forward Voltage Vf

0.82V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1mm

Length

2.9mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Infineon SIPMOS Series MOSFET, 600V Drain Source Voltage, 21mA Continuous Drain Current - BSS127H6327XTSA2


This MOSFET is a high-voltage N-channel transistor designed for surface-mount switching in compact electronic systems. It operates across a wide temperature range for demanding environments and is suitable for applications requiring a rugged, small-footprint device with controlled gate-drive characteristics.

Features and Benefits:


• 600V drain-to-source withstand delivers high-voltage switching capability
• 0.65 nC typical gate charge enables faster, lower-loss switching
• 600 Ω maximum RDS(on) reduces off-state leakage in high-voltage circuits
• 21 mA continuous drain current suits low-current control functions
• 500 mW maximum power dissipation manages thermal loading in compact layouts
• VGS rated to 20V allows compatibility with common gate-drive voltages

Applications


• Suitable for high-voltage power-conversion topologies
• Ideal for automotive-grade sensor and auxiliary circuits
• Used with compact switching regulators and flyback stages
• Can be used for gate-level signal translation in protection circuits
• Suitable for small-form-factor power-management modules

What package and mounting style does it use for PCB assembly?


It is supplied in a SOT-23 package intended for surface-mount placement and reflow soldering.

What thermal extremes can it withstand during operation?


The device is specified to operate between -55 °C and 150 °C, supporting wide thermal excursions in harsh environments.

How many electrical connections are available for circuit integration?


The component uses a three-pin configuration compatible with typical discrete MOSFET layouts.

Is the device qualified for automotive applications?


It meets the AEC-Q101 standard, indicating suitability for automotive electronic use.

Liens connexes

Soyez le/la premier·ère à être informé de nos nouveautés produits et de nos offres spéciales.

adresse e-mail

Les données personnelles que vous nous fournissez en vous inscrivant à cette liste de diffusion seront traitées conformément à notre politique de confidentialité.