Infineon SIPMOS Type N-Channel MOSFET, 21 mA, 600 V Enhancement, 3-Pin SOT-23
- N° de stock RS:
- 165-7534
- Référence fabricant:
- BSS127H6327XTSA2
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 3000 unités)*
306,00 €
(TVA exclue)
369,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 22 janvier 2027
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,102 € | 306,00 € |
| 6000 - 12000 | 0,097 € | 291,00 € |
| 15000 + | 0,091 € | 273,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 165-7534
- Référence fabricant:
- BSS127H6327XTSA2
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SIPMOS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 0.65nC | |
| Forward Voltage Vf | 0.82V | |
| Maximum Power Dissipation Pd | 500mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Width | 1.3mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SIPMOS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 0.65nC | ||
Forward Voltage Vf 0.82V | ||
Maximum Power Dissipation Pd 500mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Width 1.3mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 600V Drain Source Voltage, 21mA Continuous Drain Current - BSS127H6327XTSA2
This MOSFET is a high-voltage N-channel transistor designed for surface-mount switching in compact electronic systems. It operates across a wide temperature range for demanding environments and is suitable for applications requiring a rugged, small-footprint device with controlled gate-drive characteristics.
Features and Benefits:
• 600V drain-to-source withstand delivers high-voltage switching capability
• 0.65 nC typical gate charge enables faster, lower-loss switching
• 600 Ω maximum RDS(on) reduces off-state leakage in high-voltage circuits
• 21 mA continuous drain current suits low-current control functions
• 500 mW maximum power dissipation manages thermal loading in compact layouts
• VGS rated to 20V allows compatibility with common gate-drive voltages
• 0.65 nC typical gate charge enables faster, lower-loss switching
• 600 Ω maximum RDS(on) reduces off-state leakage in high-voltage circuits
• 21 mA continuous drain current suits low-current control functions
• 500 mW maximum power dissipation manages thermal loading in compact layouts
• VGS rated to 20V allows compatibility with common gate-drive voltages
Applications
• Suitable for high-voltage power-conversion topologies
• Ideal for automotive-grade sensor and auxiliary circuits
• Used with compact switching regulators and flyback stages
• Can be used for gate-level signal translation in protection circuits
• Suitable for small-form-factor power-management modules
• Ideal for automotive-grade sensor and auxiliary circuits
• Used with compact switching regulators and flyback stages
• Can be used for gate-level signal translation in protection circuits
• Suitable for small-form-factor power-management modules
What package and mounting style does it use for PCB assembly?
It is supplied in a SOT-23 package intended for surface-mount placement and reflow soldering.
What thermal extremes can it withstand during operation?
The device is specified to operate between -55 °C and 150 °C, supporting wide thermal excursions in harsh environments.
How many electrical connections are available for circuit integration?
The component uses a three-pin configuration compatible with typical discrete MOSFET layouts.
Is the device qualified for automotive applications?
It meets the AEC-Q101 standard, indicating suitability for automotive electronic use.
Liens connexes
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