Infineon SIPMOS Type N-Channel MOSFET, 230 mA, 60 V Enhancement, 3-Pin SOT-23 BSS138NH6327XTSA2
- N° de stock RS:
- 178-7472
- Référence fabricant:
- BSS138NH6327XTSA2
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 3000 unités)*
123,00 €
(TVA exclue)
150,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 255 000 unité(s) expédiée(s) à partir du 14 août 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,041 € | 123,00 € |
| 6000 - 12000 | 0,039 € | 117,00 € |
| 15000 + | 0,036 € | 108,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-7472
- Référence fabricant:
- BSS138NH6327XTSA2
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 230mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIPMOS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.83V | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Maximum Power Dissipation Pd | 360mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 2.9mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 230mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIPMOS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.83V | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Maximum Power Dissipation Pd 360mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 2.9mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 3.5Ω Maximum Drain Source Resistance - BSS138NH6433XTMA1
This MOSFET is a compact N-channel transistor designed for low-current switching in surface-mount applications. It operates across a wide temperature range, making it suitable for environments that demand extended thermal tolerance. The device is built for use where controlled enhancement-mode switching and modest power handling are required.
Features and Benefits:
• 60V drain voltage enables use in intermediate-voltage systems
• 3.5Ω low Rds(on) reduces conduction losses in small-signal circuits
• 230mA continuous drain current supports low-power switching loads
• 1nC typical gate charge allows fast gate transitions with minimal drive energy
• 360mW power dissipation helps manage thermal loading in constrained designs
• 20V maximum gate rating protects against excessive drive voltages
• 3.5Ω low Rds(on) reduces conduction losses in small-signal circuits
• 230mA continuous drain current supports low-power switching loads
• 1nC typical gate charge allows fast gate transitions with minimal drive energy
• 360mW power dissipation helps manage thermal loading in constrained designs
• 20V maximum gate rating protects against excessive drive voltages
Applications
• Suitable for automotive sensor signal switching
• Ideal for handheld instrument power management
• Used with control logic in telematics modules
• Can be used for load switching in battery-operated devices
• Suitable for general-purpose small-signal switching on PCBs
• Ideal for handheld instrument power management
• Used with control logic in telematics modules
• Can be used for load switching in battery-operated devices
• Suitable for general-purpose small-signal switching on PCBs
What mounting style is required for this component?
It uses a SOT-23 package intended for surface-mount placement on printed circuit assemblies.
How does it cope with elevated operating temperatures?
The device is specified to function from -55°C up to 150°C, permitting use in high-temperature environments with appropriate thermal design.
What gate drive considerations should be observed?
Keep gate voltage within ±20V to avoid overstressing the gate oxide and ensure gate-drive circuits supply sufficient current for the 1nC typical gate charge.
Is this device suitable for high-current power stages?
It is intended for small-signal and low-current switching
the 230mA continuous drain current and 3.5Ω Rds(on) limit its suitability for high-current power stages.
Liens connexes
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS138NH6433XTMA1
- Infineon SIPMOS Type N-Channel MOSFET 60 V Depletion, 3-Pin SOT-23 BSS159NH6327XTSA2
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 SN7002NH6327XTSA2
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS7728NH6327XTSA2
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS83PH6327XTSA1