Infineon SIPMOS Type N-Channel MOSFET, 230 mA, 60 V Enhancement, 3-Pin SOT-23 BSS138NH6327XTSA2
- N° de stock RS:
- 178-7472
- Référence fabricant:
- BSS138NH6327XTSA2
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 3000 unités)*
123,00 €
(TVA exclue)
150,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 102 000 unité(s) expédiée(s) à partir du 03 septembre 2026
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,041 € | 123,00 € |
| 6000 - 12000 | 0,039 € | 117,00 € |
| 15000 + | 0,036 € | 108,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-7472
- Référence fabricant:
- BSS138NH6327XTSA2
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 230mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIPMOS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 360mW | |
| Forward Voltage Vf | 0.83V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Width | 1.3mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 230mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIPMOS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 360mW | ||
Forward Voltage Vf 0.83V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Width 1.3mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 6Ω Maximum Drain Source Resistance - BSS138NH6327XTSA2
This MOSFET is a compact N-channel enhancement device designed for low-power switching in surface-mount assemblies. It operates reliably across a wide temperature span for demanding environments and is supplied in a three-pin SOT-23 package suitable for automated PCB assembly. Its configuration supports controlled gate-driven switching within common low-voltage systems.
Features and Benefits:
• 60V drain voltage rating enables higher-voltage switching
• 6Ω maximum RDS(on) minimises conduction losses in small-signal tasks
• 230mA continuous drain current supports low-current load control
• 360mW power dissipation handles modest thermal loads
• 1nC typical gate charge allows faster, efficient switching
• 20V maximum gate-source voltage prevents overdrive in drive circuits
• 6Ω maximum RDS(on) minimises conduction losses in small-signal tasks
• 230mA continuous drain current supports low-current load control
• 360mW power dissipation handles modest thermal loads
• 1nC typical gate charge allows faster, efficient switching
• 20V maximum gate-source voltage prevents overdrive in drive circuits
Applications
• Suitable for automotive sensor interface circuits
• Ideal for battery management low-current switching
• Used for signal-level load disconnect in electronics
• Can be used for power sequencing in control modules
• Appropriate for temperature-stressed industrial electronics
• Ideal for battery management low-current switching
• Used for signal-level load disconnect in electronics
• Can be used for power sequencing in control modules
• Appropriate for temperature-stressed industrial electronics
What ambient temperatures can it be used in reliably?
It is rated for continuous operation from -55°C up to 150°C, accommodating extreme cold starts and elevated operating temperatures.
What mounting and package considerations should designers note?
The device is supplied in a SOT-23 surface-mount 3-pin package optimised for space-constrained PCBs and automated reflow soldering.
How does gate charge affect switching design?
With a typical gate charge of 1nC, gate driver requirements are modest, reducing required drive current and improving switching speed in low-energy applications.
What limits should be observed to avoid device stress?
Keep gate-source voltage within ±20V and ensure dissipation does not exceed 360mW under given thermal conditions to prevent overstress.
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