Infineon SIPMOS Type N-Channel MOSFET, 230 mA, 60 V Enhancement, 3-Pin SOT-23 BSS138NH6327XTSA2
- N° de stock RS:
- 178-7472
- Référence fabricant:
- BSS138NH6327XTSA2
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 bobine de 3000 unités)*
123,00 €
(TVA exclue)
150,00 €
(TVA incluse)
Ajouter 3000 unités pour bénéficier d'une livraison gratuite
Temporairement en rupture de stock
- 273 000 unité(s) expédiée(s) à partir du 24 février 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,041 € | 123,00 € |
| 6000 - 12000 | 0,039 € | 117,00 € |
| 15000 + | 0,036 € | 108,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-7472
- Référence fabricant:
- BSS138NH6327XTSA2
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 230mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIPMOS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 360mW | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.83V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Width | 1.3 mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 230mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIPMOS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 360mW | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.83V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Width 1.3 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel Small Signal MOSFET 60 V in SOT23 package
Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.
Summary of Features
•Enhancement mode
•Logic level
•Avalanche rated
•Fast switching
•Dv/dt rated
•Pb-free lead-plating
•RoHS compliant, halogen-free
•Qualified according to automotive standards
•PPAP capable
Benefits
•Low RDS(on) provides higher efficiency and extends battery life
•Small packages save PCB space
•Best-in-class quality and reliability
Potential Applications
•Automotive
•Lighting
•Battery management
•Load switch
•DC-DC
•eMobility
•Motor control
•Onboard charger
•Telecom
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