Infineon SIPMOS Type P-Channel MOSFET, 190 mA, 250 V Enhancement, 3-Pin SOT-89 BSS192PH6327FTSA1
- N° de stock RS:
- 753-2848
- Référence fabricant:
- BSS192PH6327FTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
3,60 €
(TVA exclue)
4,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 770 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 1 000 unité(s) expédiée(s) à partir du 05 février 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 0,36 € | 3,60 € |
| 100 - 240 | 0,342 € | 3,42 € |
| 250 - 490 | 0,335 € | 3,35 € |
| 500 - 990 | 0,313 € | 3,13 € |
| 1000 + | 0,292 € | 2,92 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 753-2848
- Référence fabricant:
- BSS192PH6327FTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 190mA | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | SOT-89 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.9nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Width | 2.5 mm | |
| Length | 4.5mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 190mA | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type SOT-89 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.9nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Width 2.5 mm | ||
Length 4.5mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A Plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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