Infineon SIPMOS Type P-Channel MOSFET, 430 mA, 250 V Enhancement, 4-Pin SOT-223 BSP317PH6327XTSA1

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7,03 €

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8,51 €

(TVA incluse)

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10 +0,703 €7,03 €

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N° de stock RS:
753-2813
Numéro d'article Distrelec:
304-35-440
Référence fabricant:
BSP317PH6327XTSA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

430mA

Maximum Drain Source Voltage Vds

250V

Package Type

SOT-223

Series

SIPMOS

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

11.6nC

Maximum Power Dissipation Pd

1.8W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.6mm

Length

6.5mm

Automotive Standard

AEC-Q101

Infineon SIPMOS Series MOSFET, 250V Maximum Drain Source Voltage, 430mA Maximum Continuous Drain Current - BSP317PH6327XTSA1


This MOSFET is a P‑channel enhancement device designed for high‑voltage switching in surface‑mount assemblies. It operates across a wide thermal span suitable for industrial and automotive environments and is supplied in a SOT‑223 package for straightforward board mounting.

Features and Benefits:


• 250V drain‑source rating enables high‑voltage switching capability
• 5Ω maximum Rds minimises conduction losses in low‑current circuits
• 430mA continuous drain current supports steady‑state loads
• 11.6nC typical gate charge reduces switching energy loss
• 20V gate threshold allows standard gate drive voltages
• AEC‑Q101 qualification meets automotive component stress levels

Applications


• Suitable for automotive power distribution and load switching
• Ideal for high‑voltage reverse battery protection circuits
• Used with accessory power modules in vehicles and machinery
• Can be used for industrial control and signal switching
• Appropriate for compact surface‑mount power conversion boards

What mounting considerations apply for thermal performance?


The SOT‑223 surface‑mount format provides a thermal path through PCB copper

adequate board heatsinking increases the 1.8W power dissipation capability under elevated ambient temperatures.

How does it behave in cold and hot environments?


It is specified to function from -55°C up to 150°C, maintaining device operation across typical automotive and industrial temperature ranges.

What gate drive constraints should designers observe?


Gate‑to‑source voltage must not exceed 20V

design gate drivers accordingly and include protection to prevent exceeding this limit.

Are there switching trade‑offs to consider?


The relatively low gate charge of 11.6nC balances switching speed and drive current, so driver selection should match the desired trade‑off between transition speed and EMI.

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