Infineon SIPMOS Type N-Channel MOSFET, 260 mA, 240 V Enhancement, 3-Pin SOT-89 BSS87H6327FTSA1
- N° de stock RS:
- 752-8249
- Référence fabricant:
- BSS87H6327FTSA1
- Fabricant:
- Infineon
Sous-total (1 paquet de 10 unités)*
5,17 €
(TVA exclue)
6,26 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- 1 000 unité(s) expédiée(s) à partir du 14 janvier 2027
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 0,517 € | 5,17 € |
| 100 - 240 | 0,491 € | 4,91 € |
| 250 - 490 | 0,481 € | 4,81 € |
| 500 - 990 | 0,45 € | 4,50 € |
| 1000 + | 0,284 € | 2,84 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 752-8249
- Référence fabricant:
- BSS87H6327FTSA1
- Fabricant:
- Infineon
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 260mA | |
| Maximum Drain Source Voltage Vds | 240V | |
| Package Type | SOT-89 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 3.7nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.5mm | |
| Standards/Approvals | No | |
| Width | 2.5mm | |
| Height | 1.5mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 260mA | ||
Maximum Drain Source Voltage Vds 240V | ||
Package Type SOT-89 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 3.7nC | ||
Maximum Operating Temperature 150°C | ||
Length 4.5mm | ||
Standards/Approvals No | ||
Width 2.5mm | ||
Height 1.5mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 240V Maximum Drain Source Voltage, 1W Maximum Power Dissipation - BSS87H6327FTSA1
Features and Benefits:
• 7.5 Ω maximum Rds(on) reducing conduction losses at low currents
• 1W maximum power dissipation for modest thermal loads
• 260 mA continuous drain current supporting small-signal switching
• Vgs rating of 20V permitting wide gate-drive tolerance
• Gate charge 3.7 nC allowing predictable switching energy management
Applications
• Ideal for battery-management sensing and switching
• Used with driver ICs in power-limited converters
• Can be used for industrial signal-level high-voltage switching
• Used for compact surface-mount prototypes and small assemblies
What temperature range can it reliably endure in operation?
How many pins and what mounting format does it require on the PCB?
How does the package size affect board-space planning?
Is the device suited to automotive qualification criteria?
Liens connexes
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