Infineon SIPMOS Type P-Channel MOSFET, 1.9 A, 60 V Enhancement, 4-Pin SOT-223
- N° de stock RS:
- 911-0926
- Référence fabricant:
- BSP170PH6327XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 1000 unités)*
314,00 €
(TVA exclue)
380,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 15 janvier 2027
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 - 1000 | 0,314 € | 314,00 € |
| 2000 - 2000 | 0,299 € | 299,00 € |
| 3000 + | 0,28 € | 280,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 911-0926
- Référence fabricant:
- BSP170PH6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIPMOS | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 300mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.1V | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.8W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.5mm | |
| Height | 1.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIPMOS | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 300mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.1V | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.8W | ||
Maximum Operating Temperature 150°C | ||
Length 6.5mm | ||
Height 1.6mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 1.9A Maximum Continuous Drain Current - BSP170PH6327XTSA1
This MOSFET is a P-channel enhancement device designed for surface-mount power switching in demanding automotive and industrial contexts. It handles negative gate-drive operation and suits circuits requiring moderate current handling and thermal endurance across a wide temperature range.
Features and Benefits:
• 60V drain voltage enables robust high-voltage switching
• 300mΩ Rds(on) reduces conduction losses during operation
• 1.9A continuous current supports steady-state load delivery
• 10nC typical gate charge enables efficient drive control
• 1.8W maximum dissipation manages moderate thermal loads
• -55°C to 150°C operating range maintains function in extremes
• 300mΩ Rds(on) reduces conduction losses during operation
• 1.9A continuous current supports steady-state load delivery
• 10nC typical gate charge enables efficient drive control
• 1.8W maximum dissipation manages moderate thermal loads
• -55°C to 150°C operating range maintains function in extremes
Applications
• Suitable for load switching in automotive electronics
• Ideal for battery management and power-rail control
• Used with driver ICs for DC-DC conversion stages
• Can be used for polarity protection in vehicle systems
• Suitable for compact surface-mount power modules
• Ideal for battery management and power-rail control
• Used with driver ICs for DC-DC conversion stages
• Can be used for polarity protection in vehicle systems
• Suitable for compact surface-mount power modules
What mounting style does it require for PCB assembly?
It is supplied in a SOT-223 package intended for surface-mount placement.
How many terminals are available for circuit connections?
The device uses a four-pin configuration to accommodate source, drain and gate connectivity.
What gate-voltage limits must be observed during design?
The gate-to-source voltage must not exceed ±20V to prevent device stress.
How does the component perform under automotive qualification standards?
It meets the AEC-Q101 automotive requirement for semiconductor devices used in vehicle systems.
Liens connexes
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