onsemi Isolated 2 Type N-Channel Power MOSFET, 680 mA, 25 V Enhancement, 6-Pin SOT-23 FDC6303N
- N° de stock RS:
- 354-4941
- Référence fabricant:
- FDC6303N
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 unité)*
0,66 €
(TVA exclue)
0,80 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 2 860 unité(s) expédiée(s) à partir du 18 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 0,66 € |
| 10 - 99 | 0,56 € |
| 100 - 499 | 0,49 € |
| 500 - 999 | 0,43 € |
| 1000 + | 0,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 354-4941
- Référence fabricant:
- FDC6303N
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 680mA | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.64nC | |
| Forward Voltage Vf | 0.83V | |
| Maximum Power Dissipation Pd | 900mW | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Height | 1mm | |
| Width | 1.7 mm | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 680mA | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.64nC | ||
Forward Voltage Vf 0.83V | ||
Maximum Power Dissipation Pd 900mW | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Height 1mm | ||
Width 1.7 mm | ||
Length 3mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Digital FETs, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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