onsemi Isolated 2 Type N-Channel Power MOSFET, 680 mA, 25 V Enhancement, 6-Pin SOT-23 FDC6303N
- N° de stock RS:
- 354-4941
- Référence fabricant:
- FDC6303N
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
0,66 €
(TVA exclue)
0,80 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- 20 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- 2 837 unité(s) finale(s) expédiée(s) à partir du 11 juin 2026
Unité | Prix par unité |
|---|---|
| 1 - 9 | 0,66 € |
| 10 - 99 | 0,56 € |
| 100 - 499 | 0,49 € |
| 500 - 999 | 0,43 € |
| 1000 + | 0,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 354-4941
- Référence fabricant:
- FDC6303N
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 680mA | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.64nC | |
| Forward Voltage Vf | 0.83V | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 900mW | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 680mA | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.64nC | ||
Forward Voltage Vf 0.83V | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 900mW | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Length 3mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Digital FETs, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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