onsemi Isolated 2 N-Channel Power MOSFET, 680 mA, 25 V Enhancement, 6-Pin SOT-23

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Sous-total (1 bobine de 3000 unités)*

423,00 €

(TVA exclue)

513,00 €

(TVA incluse)

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Unité
Prix par unité
la bobine*
3000 +0,141 €423,00 €

*Prix donné à titre indicatif

N° de stock RS:
166-2740
Référence fabricant:
FDC6303N
Fabricant:
onsemi
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Marque

onsemi

Channel Type

N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

680mA

Maximum Drain Source Voltage Vds

25V

Package Type

SOT-23

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

450mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

900mW

Forward Voltage Vf

830mV

Maximum Gate Source Voltage Vgs

8V

Typical Gate Charge Qg @ Vgs

1.64nC

Transistor Configuration

Isolated

Maximum Operating Temperature

+150°C

Length

3mm

Height

1mm

Width

1.7mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

Digital FETs, Fairchild Semiconductor


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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