onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 2.5 A, 30 V Enhancement, 6-Pin SOT-23

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Sous-total (1 bobine de 3000 unités)*

465,00 €

(TVA exclue)

564,00 €

(TVA incluse)

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Prix par unité
la bobine*
3000 +0,155 €465,00 €

*Prix donné à titre indicatif

N° de stock RS:
166-2973
Référence fabricant:
FDC6561AN
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.5A

Maximum Drain Source Voltage Vds

30V

Series

PowerTrench

Package Type

SOT-23

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

152mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.78V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

960mW

Typical Gate Charge Qg @ Vgs

2.3nC

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

1.7 mm

Length

3mm

Height

1mm

Number of Elements per Chip

2

Automotive Standard

No

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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