onsemi Isolated 2 Type N-Channel Power MOSFET, 510 mA, 50 V Enhancement, 6-Pin SOT-23

Voir l’ensemble des MOSFETs

Sous-total (1 bobine de 3000 unités)*

336,00 €

(TVA exclue)

408,00 €

(TVA incluse)

Add to Basket
sélectionner ou taper la quantité
En stock
  • 6 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité
Prix par unité
la bobine*
3000 +0,112 €336,00 €

*Prix donné à titre indicatif

N° de stock RS:
178-7598
Référence fabricant:
NDC7002N
Fabricant:
onsemi
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

onsemi

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

510mA

Maximum Drain Source Voltage Vds

50V

Package Type

SOT-23

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

4Ω

Channel Mode

Enhancement

Minimum Operating Temperature

150°C

Typical Gate Charge Qg @ Vgs

1nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.8V

Maximum Power Dissipation Pd

960mW

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Width

1.7 mm

Standards/Approvals

No

Length

3mm

Height

1mm

Number of Elements per Chip

2

Automotive Standard

No

Enhancement Mode Dual MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Liens connexes