onsemi Isolated 2 Type N-Channel Power MOSFET, 510 mA, 50 V Enhancement, 6-Pin SOT-23 NDC7002N
- N° de stock RS:
- 739-0161
- Référence fabricant:
- NDC7002N
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
2,01 €
(TVA exclue)
2,43 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 7 645 unité(s) expédiée(s) à partir du 01 janvier 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 0,402 € | 2,01 € |
| 50 - 95 | 0,346 € | 1,73 € |
| 100 - 495 | 0,30 € | 1,50 € |
| 500 - 995 | 0,262 € | 1,31 € |
| 1000 + | 0,24 € | 1,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 739-0161
- Référence fabricant:
- NDC7002N
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 510mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 4Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 960mW | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | No | |
| Width | 1.7 mm | |
| Height | 1mm | |
| Length | 3mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 510mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 4Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 960mW | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals No | ||
Width 1.7 mm | ||
Height 1mm | ||
Length 3mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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