Vishay EF Type N-Channel Power MOSFET, 20 A, 800 V, 3-Pin TO-220AB SIHP24N80AEF-GE3
- N° de stock RS:
- 239-5382
- Référence fabricant:
- SIHP24N80AEF-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
96,00 €
(TVA exclue)
116,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 04 décembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,92 € | 96,00 € |
| 100 - 200 | 1,805 € | 90,25 € |
| 250 + | 1,668 € | 83,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 239-5382
- Référence fabricant:
- SIHP24N80AEF-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | EF | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.195Ω | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Maximum Power Dissipation Pd | 208W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series EF | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.195Ω | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Maximum Power Dissipation Pd 208W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 800V Drain Source Voltage, 20A Drain Current - SIHP24N80AEF-GE3
This power MOSFET is a high-voltage N-channel switching device designed for power conversion and control in industrial electronic systems. It is supplied in a through-hole TO-220AB package for straightforward mounting and heat-sink attachment, and it is intended for applications that require robust voltage handling and elevated operating temperatures.
Features and Benefits:
• 800V drain rating enables high-voltage switching applications • 20A continuous drain current supports significant load currents • 0.195Ω Rds(on) reduces conduction losses under load • 208W power dissipation allows higher thermal loading • 90nC typical gate charge facilitates switching performance optimisation • 150°C maximum junction temperature endures elevated thermal environments
Applications
• Suitable for high-voltage power supplies and converters • Ideal for industrial motor drive switching stages • Used for switched-mode power supplies in automation equipment • Can be used for power regulation in electrical control panels
What gate voltage limits must be observed during drive design?
The device requires gate drive voltages within ±30V maximum between gate and source to avoid gate overstress.
How should thermal management be approached for sustained operation?
Use a heat-sink attached to the TO-220AB tab and ensure adequate airflow to handle up to 208W dissipation under specified mounting and cooling conditions.
What temperature range is acceptable for deployment in harsh environments?
The component operates from -55°C up to a maximum of 150°C junction temperature, permitting use in elevated-temperature assemblies.
Are there considerations for switching speed versus drive energy?
The typical gate charge of 90nC requires sufficient drive current to achieve desired switching times while managing gate-drive energy and EMI.
Liens connexes
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