Vishay SIHP Type N-Channel MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-220AB SIHP155N60EF-GE3
- N° de stock RS:
- 279-9925
- Référence fabricant:
- SIHP155N60EF-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
126,20 €
(TVA exclue)
152,70 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 900 unité(s) expédiée(s) à partir du 28 août 2026
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 2,524 € | 126,20 € |
| 100 + | 2,244 € | 112,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 279-9925
- Référence fabricant:
- SIHP155N60EF-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220AB | |
| Series | SIHP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.157Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Power Dissipation Pd | 179W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220AB | ||
Series SIHP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.157Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Power Dissipation Pd 179W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SIHP Series MOSFET, 600V Maximum Drain Source Voltage, 21A Maximum Continuous Drain Current - SIHP155N60EF-GE3
This MOSFET is a through-hole N-channel transistor designed for high-voltage switching and power applications. It operates across an extended temperature range and is supplied in a TO-220AB package suitable for conventional heatsinking and panel mounting. The device is intended for engineers requiring a robust semiconductor for discrete power stages and switching topologies where a combination of voltage capability and thermal endurance is needed.
Features and Benefits:
• 600V drain rating enables high-voltage switching applications
• 21A continuous drain current supports substantial load currents
• 0.157 Ω low Rds(on) reduces conduction losses under load
• 179W power dissipation allows higher thermal loading
• 38 nC typical gate charge for manageable switching energy
• 30V gate tolerance supports wide gate-drive voltages
• 21A continuous drain current supports substantial load currents
• 0.157 Ω low Rds(on) reduces conduction losses under load
• 179W power dissipation allows higher thermal loading
• 38 nC typical gate charge for manageable switching energy
• 30V gate tolerance supports wide gate-drive voltages
Applications
• Suitable for mains and high-voltage inverter switches
• Used with power supplies requiring robust thermal margin
• Ideal for industrial motor drive stages
• Can be used for DC-DC converters with high-voltage rails
• Used for general-purpose switching in power electronics
• Used with power supplies requiring robust thermal margin
• Ideal for industrial motor drive stages
• Can be used for DC-DC converters with high-voltage rails
• Used for general-purpose switching in power electronics
What ambient temperatures can the device withstand in operation?
It is specified to operate between -55 °C and 150 °C, enabling use in harsh thermal environments.
How is the package useful for thermal management?
The TO-220AB format provides a metal tab for direct attachment to heatsinks, improving heat transfer for high dissipation.
What gate-drive constraints should be observed?
The maximum gate-to-source voltage is 30V, so gate drivers should be limited to this value to avoid overstress.
Is the device compliant with common material restrictions?
It meets RoHS requirements, restricting certain hazardous substances in its construction.
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