Vishay EF Type N-Channel Power MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-220AB SIHP11N80AEF-GE3
- N° de stock RS:
- 653-139
- Référence fabricant:
- SIHP11N80AEF-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
64,85 €
(TVA exclue)
78,45 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 1 000 unité(s) expédiée(s) à partir du 07 août 2026
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 200 | 1,297 € | 64,85 € |
| 250 + | 1,271 € | 63,55 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 653-139
- Référence fabricant:
- SIHP11N80AEF-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220AB | |
| Series | EF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.483Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 78W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220AB | ||
Series EF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.483Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 78W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 800V Drain Source Voltage, 8A Continuous Drain Current - SIHP11N80AEF-GE3
This power MOSFET is a high-voltage N-channel transistor designed for switching and amplification in demanding electronic systems. It operates over a wide temperature span and fits a through-hole TO-220AB package, making it suitable for repairs, prototype boards and production assemblies where a robust, mountable device is required. The component is RoHS-compliant and intended for enhancement-mode applications requiring substantial voltage handling and moderate current.
Features and Benefits:
• 800V drain-source rating enables high-voltage switching
• 8A continuous drain current supports sustained load conduction
• 0.483Ω Rds(on) reduces conduction losses during operation
• 78W power dissipation capacity tolerates elevated thermal load
• 27nC typical gate charge gives predictable switching behaviour
• ±30V gate tolerance permits high gate-drive amplitudes
• 8A continuous drain current supports sustained load conduction
• 0.483Ω Rds(on) reduces conduction losses during operation
• 78W power dissipation capacity tolerates elevated thermal load
• 27nC typical gate charge gives predictable switching behaviour
• ±30V gate tolerance permits high gate-drive amplitudes
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for motor-drive stages with medium current requirements
• Used with industrial switching circuits exposed to heat
• Can be used for battery-charger and inverter topologies
• Suited to through-hole hardware repair and retrofit projects
• Ideal for motor-drive stages with medium current requirements
• Used with industrial switching circuits exposed to heat
• Can be used for battery-charger and inverter topologies
• Suited to through-hole hardware repair and retrofit projects
What temperature range will it function within?
It is rated to operate from -55°C up to 150°C, permitting use in environments with large thermal variations.
How should it be mounted for effective heat management?
The TO-220AB through-hole package allows attachment to a heatsink for improved thermal dissipation and stable power handling.
What gate-drive considerations are required?
The device is gate-rated to ±30V, so gate drivers should be selected to provide appropriate voltage without exceeding this limit.
Is it suitable for automotive-standard designs?
It is not specified to meet automotive standards, so designs requiring automotive qualification should consider that limitation.
Liens connexes
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