Vishay EF Type N-Channel Power MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-220AB
- N° de stock RS:
- 653-140
- Référence fabricant:
- SIHP11N80AEF-GE3
- Fabricant:
- Vishay
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2,50 €
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3,02 €
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Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 2,50 € |
| 10 + | 2,42 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 653-140
- Référence fabricant:
- SIHP11N80AEF-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | EF | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.483Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 78W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series EF | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.483Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 78W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 800V Drain Source Voltage, 8A Continuous Drain Current - SIHP11N80AEF-GE3
This power MOSFET is a high-voltage switching device designed for use in industrial power conversion and control systems. It operates as an N‑channel enhancement‑mode transistor in a through‑hole TO‑220AB package, providing a practical option for engineers requiring a discrete component for board‑level mounting and thermal management in demanding environments.
Features and Benefits:
• 800V drain rating enabling high-voltage switching applications • 8A continuous drain current supporting moderate load currents • Rds(on) 0.483Ω reducing conduction losses under load • 78W power dissipation for effective thermal handling • 27nC typical gate charge for predictable switching dynamics • 150°C maximum operating temperature for elevated-temperature use
Applications
• Suitable for industrial motor drive front-ends handling high voltage • Ideal for power supplies requiring high-voltage switching elements • Used for inverter stages in medium-power electrical systems • Can be used for brake and snubber circuits in automation equipment
What gate voltage range should be observed for safe operation?
The device requires gate excursions within ±30V maximum relative to its source to avoid gate over‑stress.
How does the package affect thermal management on a populated board?
The TO‑220AB through‑hole format allows direct heatsinking to the rear tab, improving conduction to an external heatsink and aiding removal of 78W of dissipated power under appropriate cooling.
What ambient conditions limit its deployment?
The component is specified to operate down to -55°C and up to 150°C junction temperature
system thermal design must ensure junction temperatures remain below the 150°C limit.
What switching consideration arises from the gate charge figure?
A typical gate charge of 27nC lets designers estimate drive current requirements and switching losses when selecting a gate driver and predicting turn‑on/turn‑off timing.
Liens connexes
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