Vishay SIHP N-Channel MOSFET, 47 A, 650 V Enhancement, 3-Pin TO-220AB SIHP054N65E-GE3
- N° de stock RS:
- 279-9921
- Référence fabricant:
- SIHP054N65E-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
263,95 €
(TVA exclue)
319,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- 950 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 5,279 € | 263,95 € |
| 100 + | 4,693 € | 234,65 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 279-9921
- Référence fabricant:
- SIHP054N65E-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 47A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220AB | |
| Series | SIHP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.058Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 108nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 312W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 47A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220AB | ||
Series SIHP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.058Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 108nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 312W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SIHP Series MOSFET, 650V Maximum Drain Source Voltage, 47A Maximum Continuous Drain Current - SIHP054N65E-GE3
This MOSFET is a high-voltage N‑channel enhancement transistor designed for power switching in demanding electrical systems. It is supplied in a through‑hole TO‑220AB package and is intended for use where substantial drain current and elevated voltage tolerance are required. The component is RoHS‑compliant and operates across a wide ambient temperature range suitable for industrial environments.
Features and Benefits:
• 650V drain rating enables high-voltage switching applications
• 47A continuous drain current supports heavy‑load operation
• 312W power dissipation allows sustained high‑power handling
• 0.058Ω Rds(on) reduces conduction losses under load
• 108nC typical gate charge permits controlled switching dynamics
• Gate‑source withstand of 30V safeguards drive margin
• 47A continuous drain current supports heavy‑load operation
• 312W power dissipation allows sustained high‑power handling
• 0.058Ω Rds(on) reduces conduction losses under load
• 108nC typical gate charge permits controlled switching dynamics
• Gate‑source withstand of 30V safeguards drive margin
Applications
• Suitable for industrial motor drive inverter stages
• Ideal for high‑voltage power supplies and converters
• Used for renewable energy inverter switching assemblies
• Can be used for UPS and battery‑backup power electronics
• Suitable for high‑current relay replacement circuits
• Ideal for high‑voltage power supplies and converters
• Used for renewable energy inverter switching assemblies
• Can be used for UPS and battery‑backup power electronics
• Suitable for high‑current relay replacement circuits
What temperature extremes can it endure in operation?
It is specified to function from -55°C up to 150°C, allowing use in a broad range of thermal conditions.
How is the device mounted for thermal and mechanical stability?
The component is configured for through‑hole mounting in a TO‑220AB format to facilitate heatsinking and secure PCB attachment.
What is the expected switching behaviour with respect to gate drive?
With a typical gate charge of 108nC and a maximum Vgs of 30V, switching speed and required drive energy can be calculated to match driver capability.
How does on‑resistance influence efficiency in high‑current designs?
The maximum drain‑source resistance of 0.058Ω lowers I²R losses, improving efficiency when operating near the specified 47A continuous current limit.
Liens connexes
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