Vishay SIHP Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220AB SIHP074N65E-GE3
- N° de stock RS:
- 279-9923
- Référence fabricant:
- SIHP074N65E-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
244,35 €
(TVA exclue)
295,65 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 1 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 4,887 € | 244,35 € |
| 100 + | 4,344 € | 217,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 279-9923
- Référence fabricant:
- SIHP074N65E-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220AB | |
| Series | SIHP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.078Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 250W | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220AB | ||
Series SIHP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.078Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 250W | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SIHP Series MOSFET, 650V Maximum Drain Source Voltage, 35A Maximum Continuous Drain Current - SIHP074N65E-GE3
This n-channel enhancement MOSFET is designed to switch and control high-voltage, high-current circuits in industrial and electronic systems. Suited to through-hole mounting, it provides a Compact power‑semiconductor solution for discrete power stages where robust voltage handling and thermal endurance are required. The device operates across a wide ambient range and is intended for use in applications demanding elevated operating temperatures and substantial continuous current capability.
Features and Benefits:
• 650V drain voltage enables high-voltage switching applications
• 35A continuous current supports significant power delivery
• 0.078Ω on-resistance minimises conduction losses
• 250W power dissipation facilitates higher load handling
• 8nC typical gate charge allows Faster switching response
• 30V gate tolerance protects gate from common drive levels
• 35A continuous current supports significant power delivery
• 0.078Ω on-resistance minimises conduction losses
• 250W power dissipation facilitates higher load handling
• 8nC typical gate charge allows Faster switching response
• 30V gate tolerance protects gate from common drive levels
Applications
• Suitable for high-voltage motor drive front-ends
• Ideal for switch-mode power supplies in industrial equipment
• Used for inverter stages in power conversion systems
• Can be used for electronic load switches in automation panels
• Suitable for surge suppressors and snubber network implementations
• Ideal for switch-mode power supplies in industrial equipment
• Used for inverter stages in power conversion systems
• Can be used for electronic load switches in automation panels
• Suitable for surge suppressors and snubber network implementations
What mounting method does it require for PCB integration?
It is supplied in a through‑hole TO‑220AB package permitting secure mechanical attachment and efficient heatsinking to a chassis or heatsink plate.
How does it perform in elevated-temperature environments?
It is rated for operation up to 150°C which supports thermal margins in densely packed power assemblies.
What is the typical gate drive demand for switching design?
Expect a typical gate charge of 8nC at standard gate‑drive levels, informing gate‑driver current and switching‑energy calculations.
What environmental or regulatory standard applies to its materials?
The device meets RoHS requirements regarding restricted substances in component materials.
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