Vishay SIHP Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220AB SIHP074N65E-GE3
- N° de stock RS:
- 279-9923
- Référence fabricant:
- SIHP074N65E-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
244,35 €
(TVA exclue)
295,65 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- 1 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 4,887 € | 244,35 € |
| 100 + | 4,344 € | 217,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 279-9923
- Référence fabricant:
- SIHP074N65E-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SIHP | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.078Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 250W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SIHP | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.078Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 250W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SIHP Series MOSFET, 650V Drain Source Voltage, 35A Continuous Drain Current - SIHP074N65E-GE3
This MOSFET is a high-voltage N-channel enhancement device designed for power switching and conversion in industrial electronics. It supports through-hole mounting in a TO-220AB package and is suited to applications requiring robust thermal handling and gate protection within a broad ambient range.
Features and Benefits:
• 650V drain rating enabling high-voltage switching capability
• 35A continuous drain current for sustained power delivery
• 0.078Ω RDS(on) delivering low conduction losses
• 250W power dissipation for elevated thermal performance
• 8nC typical gate charge for efficient gate-drive switching
• 30V maximum gate-source protection to limit gate stress
• 35A continuous drain current for sustained power delivery
• 0.078Ω RDS(on) delivering low conduction losses
• 250W power dissipation for elevated thermal performance
• 8nC typical gate charge for efficient gate-drive switching
• 30V maximum gate-source protection to limit gate stress
Applications
• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor inverter stages
• Used for renewable energy power-conditioning circuits
• Can be used for hard-switching in industrial converters
• Suitable for through-hole replacement in legacy designs
• Ideal for industrial motor inverter stages
• Used for renewable energy power-conditioning circuits
• Can be used for hard-switching in industrial converters
• Suitable for through-hole replacement in legacy designs
What temperature extremes can it withstand during operation?
It operates reliably across a wide thermal range from -55°C up to 150°C, allowing use in harsh ambient conditions.
How does the package affect cooling and mounting?
The TO-220AB through-hole package provides a metal tab for heatsinking and straightforward PCB or chassis attachment for enhanced thermal management.
What gate-drive considerations are required for switching performance?
Design gate drivers to supply sufficient current for an 8nC gate charge to achieve desired switching speeds while respecting the 30V gate-source limit.
Are there specific forward conduction characteristics to note?
The device presents a forward voltage of 1.2V under conduction, which should be accounted for in loss and thermal calculations.
Liens connexes
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