Infineon SIPMOS Type P-Channel MOSFET, 620 mA, 60 V Enhancement, 3-Pin SC-59 BSR315PH6327XTSA1
- N° de stock RS:
- 215-2469
- Référence fabricant:
- BSR315PH6327XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 50 unités)*
22,10 €
(TVA exclue)
26,75 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 1 900 unité(s) expédiée(s) à partir du 04 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 50 - 50 | 0,442 € | 22,10 € |
| 100 - 200 | 0,322 € | 16,10 € |
| 250 - 450 | 0,305 € | 15,25 € |
| 500 - 1200 | 0,283 € | 14,15 € |
| 1250 + | 0,26 € | 13,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 215-2469
- Référence fabricant:
- BSR315PH6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 620mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIPMOS | |
| Package Type | SC-59 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 0.5W | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 620mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIPMOS | ||
Package Type SC-59 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 0.5W | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon SIPMOS® Small-Signal-Transistor P-channel enhancement mode Field-Effect Transistor (FET), -20V maximum drain source voltage with SOT-23 package type. The Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. The BSS84P is a p-channel enhancement mode MOSFET in a small surface mount package with superior switching performance. This product is particularly suited for low-voltage, low-current applications.
Enhancement mode
Logic level
Avalanche rated
Fast switching
Dv/dt rated
Pb-free lead-plating
Liens connexes
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SC-59
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SC-70
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SC-70 BSS84PWH6327XTSA1
- Infineon BSR92P Type P-Channel MOSFET 250 V Enhancement, 3-Pin SC-59
- Infineon BSR316P Type P-Channel MOSFET 100 V Enhancement, 3-Pin SC-59
- Infineon BSR316P Type P-Channel MOSFET 100 V Enhancement, 3-Pin SC-59 BSR316PH6327XTSA1
- Infineon BSR92P Type P-Channel MOSFET 250 V Enhancement, 3-Pin SC-59 BSR92PH6327XTSA1
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SC-70