Infineon SIPMOS Type P-Channel MOSFET, 620 mA, 60 V Enhancement, 3-Pin SC-59

Offre groupée disponible
Consulter les options de prix de gros

Sous-total (1 bobine de 3000 unités)*

522,00 €

(TVA exclue)

633,00 €

(TVA incluse)

Add to Basket
sélectionner ou taper la quantité
Temporairement en rupture de stock
  • Expédition à partir du 30 novembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité
Prix par unité
la bobine*
3000 - 30000,174 €522,00 €
6000 - 60000,17 €510,00 €
9000 +0,165 €495,00 €

*Prix donné à titre indicatif

N° de stock RS:
215-2468
Référence fabricant:
BSR315PH6327XTSA1
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

620mA

Maximum Drain Source Voltage Vds

60V

Package Type

SC-59

Series

SIPMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

800mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

0.5W

Typical Gate Charge Qg @ Vgs

6nC

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 620mA Maximum Continuous Drain Current - BSR315PH6327XTSA1


This MOSFET is a P‑channel enhancement device designed for switching and signal control in compact surface‑mount assemblies. It operates across a wide temperature range and is intended for applications requiring modest continuous current handling and low power loss in a small SC‑59 package. The component is suitable where a low gate‑charge switching element and straightforward gate‑drive capability are required.

Features and Benefits:


• 60V maximum drain voltage enables higher-voltage switching
• 800mΩ Rds(on) reduces conduction losses at low currents
• 0.62A continuous drain current supports small‑signal loads
• 6nC typical gate charge enables faster switching transitions
• 0.5W power dissipation suits low‑power surface‑mount designs
• -55°C to 150°C rating for extended temperature environments

Applications


• Used for low‑voltage battery protection circuits
• Suitable for portable device power‑path switching
• Ideal for signal‑level polarity control in modules
• Can be used for small motor‑drive gate stages
• Used with thermal‑management‑limited SMD assemblies

What gate‑drive limitations should I consider?


The gate may be driven up to ±20V relative to the source, so ensure gate‑drive circuitry stays within this voltage range.

How does the thermal environment affect continuous current handling?


The 0.5W dissipation limit constrains current under high ambient temperatures

adequate PCB thermal relief or derating is required to maintain 0.62A continuous current.

What are the mounting considerations for assembly?


It is supplied in an SC‑59 surface‑mount package with three pins, so standard SMD reflow profiles and the correct land‑pattern design are recommended.

Is this device suited for automotive specification programmes?


It is not classified to automotive standards and should not be specified where automotive‑grade certification is mandated.

Liens connexes

Soyez le/la premier·ère à être informé de nos nouveautés produits et de nos offres spéciales.

adresse e-mail

Les données personnelles que vous nous fournissez en vous inscrivant à cette liste de diffusion seront traitées conformément à notre politique de confidentialité.