Infineon BSR92P Type P-Channel MOSFET, 140 mA, 250 V Enhancement, 3-Pin SC-59
- N° de stock RS:
- 170-2249
- Référence fabricant:
- BSR92PH6327XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 bobine de 3000 unités)*
426,00 €
(TVA exclue)
516,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 01 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,142 € | 426,00 € |
| 6000 - 6000 | 0,135 € | 405,00 € |
| 9000 + | 0,127 € | 381,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 170-2249
- Référence fabricant:
- BSR92PH6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 140mA | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | BSR92P | |
| Package Type | SC-59 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 3.6nC | |
| Maximum Power Dissipation Pd | 500mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -0.8V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Height | 1.1mm | |
| Width | 1.6 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 140mA | ||
Maximum Drain Source Voltage Vds 250V | ||
Series BSR92P | ||
Package Type SC-59 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 3.6nC | ||
Maximum Power Dissipation Pd 500mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -0.8V | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Height 1.1mm | ||
Width 1.6 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
All products in small signal packages are suitable for automotive applications
Infineons highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics
Enhancement mode
Pb-free lead plating
Target Applications:
Automotive
Consumer
DC-DC
eMobility
Motor control
Notebook
Onboard charger
Liens connexes
- Infineon SIPMOS® P-Channel MOSFET 250 V, 3-Pin SC-59 BSR92PH6327XTSA1
- Infineon SIPMOS® P-Channel MOSFET 100 V, 3-Pin SC-59 BSR316PH6327XTSA1
- Infineon SIPMOS® P-Channel MOSFET 60 V, 3-Pin SC-59 BSR315PH6327XTSA1
- Infineon SIPMOS® P-Channel MOSFET 60 V, 3-Pin DPAK SPD09P06PLGBTMA1
- Infineon SIPMOS® P-Channel MOSFET 60 V, 3-Pin SOT-23 BSS84PH6327XTSA2
- Infineon SIPMOS® P-Channel MOSFET 60 V, 3-Pin SOT-323 BSS84PWH6327XTSA1
- Infineon SIPMOS® P-Channel MOSFET 60 V, 3-Pin D2PAK SPB80P06PGATMA1
- Infineon SIPMOS® P-Channel MOSFET 250 V, 3-Pin SOT-223 BSP317PH6327XTSA1
