Vishay TrenchFET P-Channel MOSFET, 190 A, 60 V, 3-Pin SC-75 SI1021R-T1-GE3
- N° de stock RS:
- 180-7825
- Référence fabricant:
- SI1021R-T1-GE3
- Fabricant:
- Vishay
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 180-7825
- Référence fabricant:
- SI1021R-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 190 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | TrenchFET | |
| Package Type | SC-75 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Number of Elements per Chip | 1 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 190 A | ||
Maximum Drain Source Voltage 60 V | ||
Series TrenchFET | ||
Package Type SC-75 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Number of Elements per Chip 1 | ||
- Pays d'origine :
- CN
The Vishay Siliconix Si1021R series TrenchFET power MOSFET has low on state resistance and has fast switching speed. It is used in battery operated systems, power supply converter circuits, solid state relays and in drivers.
Ease in driving switches
Low offset voltage
Low-voltage operation
High-speed circuits
Easily driven without buffer
Small board Area
Low offset voltage
Low-voltage operation
High-speed circuits
Easily driven without buffer
Small board Area
Liens connexes
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