Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 4.5 A, 20 V Enhancement, 8-Pin SC-70 SIA938DJT-T1-GE3

N° de stock RS:: 228-2834
Référence fabricant:: SIA938DJT-T1-GE3
Fabricant:: Vishay

Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 4.5 A, 20 V Enhancement, 8-Pin SC-70 SIA938DJT-T1-GE3

Sous-total (1 bobine de 3000 unités)*

450,00 €

(TVA exclue)

540,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

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Unité	Prix par unité	la bobine*
3000 +	0,15 €	450,00 €

*Prix donné à titre indicatif

N° de stock RS:: 228-2834
Référence fabricant:: SIA938DJT-T1-GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	4.5A
	Maximum Drain Source Voltage Vds	20V
	Series	TrenchFET
	Package Type	SC-70
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	21.5mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	3.5nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	7.8W
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 4.5A
	Maximum Drain Source Voltage Vds 20V
	Series TrenchFET
	Package Type SC-70
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 21.5mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 3.5nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 7.8W
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet - SIA938DJT-T1-GE3

Vishay TrenchFET Series MOSFET, 20V Maximum Drain Source Voltage, 4.5A Maximum Continuous Drain Current - SIA938DJT-T1-GE3

This MOSFET is a Compact, surface-mount dual N-channel transistor designed for switching and power-management duties in electronic systems. It operates at low voltage levels and is suitable for Compact assemblies where board space is limited. The device accommodates moderate continuous currents and supports operation across a wide temperature span for industrial and commercial electronics environments.

Features and Benefits:

• 20V drain rating enables low-voltage system switching
• 4.5A continuous drain current supports moderate load currents
• 21.5mΩ low Rds(on) reduces conduction losses
• 3.5nC typical gate charge minimises switching energy
• 12V maximum gate-source protection simplifies gate drive
• 7.8W power dissipation allows thermal headroom in Compact layouts

Applications

• Suitable for battery-powered motor drivers and controllers
• Ideal for DC-DC converters in embedded systems
• Used for load switching in automation control modules
• Can be used for power distribution in portable electronics

What thermal range can it tolerate during operation?

It is rated to function between -55°C and 150°C, supporting cold-start and high-temperature operation.

How is the device packaged for PCB assembly?

It comes in a Compact SC-70 surface-mount package with an eight-pin count for dual-element placement.

Can this transistor be used in multi-transistor chip configurations?

Yes, it contains two transistor elements on a single die configured as a dual transistor, simplifying layout for paired switching.

What gate-drive considerations apply for robust operation?

The maximum permissible gate-to-source voltage is 12V

designs should limit drive voltage accordingly to avoid exceeding this rating.

How much power can the device safely dissipate on a PCB?

The maximum power dissipation is specified as 7.8W, which must be managed via PCB thermal design and appropriate copper area.