Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 1.1 A, 20 V Enhancement, 6-Pin SC-88 SI1967DH-T1-GE3

N° de stock RS:: 145-2681
Référence fabricant:: SI1967DH-T1-GE3
Fabricant:: Vishay

Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 1.1 A, 20 V Enhancement, 6-Pin SC-88 SI1967DH-T1-GE3

Sous-total (1 bobine de 3000 unités)*

453,00 €

(TVA exclue)

549,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 14 décembre 2026

Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité	Prix par unité	la bobine*
3000 +	0,151 €	453,00 €

*Prix donné à titre indicatif

N° de stock RS:: 145-2681
Référence fabricant:: SI1967DH-T1-GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Power MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	1.1A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SC-88
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	790mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	8V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	2.6nC
	Maximum Power Dissipation Pd	1.25W
	Transistor Configuration	Isolated
	Maximum Operating Temperature	150°C
	Height	1mm
	Length	2.2mm
	Standards/Approvals	No
	Width	1.35mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type Power MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 1.1A
	Maximum Drain Source Voltage Vds 20V
	Package Type SC-88
	Series TrenchFET
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 790mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 8V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 2.6nC
	Maximum Power Dissipation Pd 1.25W
	Transistor Configuration Isolated
	Maximum Operating Temperature 150°C
	Height 1mm
	Length 2.2mm
	Standards/Approvals No
	Width 1.35mm
	Number of Elements per Chip 2
	Automotive Standard No

Pays d'origine :: CN

Vishay TrenchFET Series Power MOSFET, 20V Maximum Drain Source Voltage, 1.1A Maximum Continuous Drain Current - SI1967DH-T1-GE3

This power MOSFET is a surface-mounted P-channel transistor intended for low-voltage switching and analogue functions in compact electronic assemblies. It operates as an enhancement-mode device and is designed to be integrated where isolated transistor configuration and modest continuous current handling are required. The component is supplied in a small SC-88 package suitable for dense layouts.

Features and Benefits:

• 20V drain-source rating enables low-voltage switching
• 1.1A continuous drain current supports steady loads
• 790mΩ Rds(on) minimises conduction losses
• 2.6nC typical gate charge allows faster gate transitions
• 1.25W power dissipation copes with moderate thermal stress

Applications

• Suitable for battery-protection circuits in portable equipment
• Ideal for load switching in compact power modules
• Used with level-shifting stages in analogue front-ends
• Can be used for dual-channel switching in tight PCB spaces

What mounting style is required for assembly?

It is intended for surface-mount assembly on standard solderable pads compatible with SC-88 footprints.

How many active transistor elements does it contain?

The device contains two elements per chip, enabling dual-function or complementary routing in designs.

What gate voltage limits should designers observe?

The maximum gate-to-source voltage rating is 8V, which must not be exceeded to avoid device stress.

What temperature range can it withstand during operation?

It is specified to operate between -55°C and 150°C, accommodating wide environmental conditions.