Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 1.1 A, 20 V Enhancement, 6-Pin SC-88

N° de stock RS:: 145-2681
Référence fabricant:: SI1967DH-T1-GE3
Fabricant:: Vishay

Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 1.1 A, 20 V Enhancement, 6-Pin SC-88

Sous-total (1 bobine de 3000 unités)*

393,00 €

(TVA exclue)

477,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 30 octobre 2026

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Unité	Prix par unité	la bobine*
3000 +	0,131 €	393,00 €

*Prix donné à titre indicatif

N° de stock RS:: 145-2681
Référence fabricant:: SI1967DH-T1-GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Power MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	1.1A
	Maximum Drain Source Voltage Vds	20V
	Series	TrenchFET
	Package Type	SC-88
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	790mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	150°C
	Maximum Power Dissipation Pd	1.25W
	Maximum Gate Source Voltage Vgs	8V
	Typical Gate Charge Qg @ Vgs	2.6nC
	Maximum Operating Temperature	-55°C
	Transistor Configuration	Isolated
	Standards/Approvals	No
	Length	2.2mm
	Height	1mm
	Width	1.35mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type Power MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 1.1A
	Maximum Drain Source Voltage Vds 20V
	Series TrenchFET
	Package Type SC-88
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 790mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature 150°C
	Maximum Power Dissipation Pd 1.25W
	Maximum Gate Source Voltage Vgs 8V
	Typical Gate Charge Qg @ Vgs 2.6nC
	Maximum Operating Temperature -55°C
	Transistor Configuration Isolated
	Standards/Approvals No
	Length 2.2mm
	Height 1mm
	Width 1.35mm
	Number of Elements per Chip 2
	Automotive Standard No

Pays d'origine :: CN

Vishay TrenchFET Series Power MOSFET, 20V Maximum Drain Source Voltage, 1.1A Maximum Continuous Drain Current - SI1967DH-T1-GE3

This power MOSFET is a P‑channel surface‑mount transistor designed for low‑voltage switching in Compact electronic systems. It operates as an enhancement‑mode device and is intended for board‑level power control where modest current handling and a small footprint are required.

Features and Benefits:

• 20V drain‑source rating enables low‑voltage system deployment • 1.1A continuous drain current supports light power switching • 790mΩ low Rds(on) reduces conduction losses during operation • 2.6nC typical gate charge permits Faster gate transitions • 1.25W power dissipation manages thermal load in small assemblies • Dual‑element isolated transistor allows paired switching arrangements

Applications

• Suitable for battery management and power rail switching in portable equipment • Ideal for load switching in industrial control modules • Used for reverse‑polarity protection in embedded systems • Can be used for signal level shifting in mixed‑voltage circuitry

What package should I plan for when designing the PCB?

The device is supplied in a 6‑pin SC‑88 SMD package that occupies a Compact footprint suitable for high‑density boards.

How does temperature affect operation limits?

The component is specified for operation between -55°C and 150°C, defining the allowable ambient and junction environments for reliable switching.

Can this component be used in automotive systems?

It is not classified to automotive standards, so suitability should be evaluated against vehicular qualification requirements before use.

What gate voltage range is permissible for control signals?

Gate drive must not exceed an 8V gate‑to‑source limit to avoid device overstress.

How many transistor elements are on the chip and what configuration are they?

The chip contains two isolated elements configured to enable paired or independent switching arrangements.