Vishay SQ Rugged Type N-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin PowerPAK 1212
- N° de stock RS:
- 170-8306
- Référence fabricant:
- SQS462EN-T1_GE3
- Fabricant:
- Vishay
Sous-total (1 bobine de 3000 unités)*
783,00 €
(TVA exclue)
948,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 3 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,261 € | 783,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 170-8306
- Référence fabricant:
- SQS462EN-T1_GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 1212 | |
| Series | SQ Rugged | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 135mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 33W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.82V | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.4mm | |
| Width | 3.4 mm | |
| Height | 1.12mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 1212 | ||
Series SQ Rugged | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 135mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 33W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.82V | ||
Maximum Operating Temperature 175°C | ||
Length 3.4mm | ||
Width 3.4 mm | ||
Height 1.12mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
Liens connexes
- Vishay SQ Rugged N-Channel MOSFET 60 V, 8-Pin PowerPAK 1212-8 SQS462EN-T1_GE3
- Vishay SQ Rugged N-Channel MOSFET 60 V, 8-Pin SOIC SQ4850EY-T1_GE3
- Vishay N-Channel MOSFET 60 V PowerPAK 1212-8 SQS460EN-T1_GE3
- Vishay SQ Rugged N-Channel MOSFET 40 V, 4-Pin PowerPAK SO-8L SQJ412EP-T1_GE3
- Vishay Dual Silicon N-Channel MOSFET 60 V, 8-Pin PowerPAK 1212-8W SQS460CENW-T1_GE3
- Vishay SQ Rugged P-Channel MOSFET 30 V, 8-Pin SOIC SQ4431EY-T1_GE3
- Vishay SQ Rugged P-Channel MOSFET 40 V, 8-Pin SOIC SQ4401EY-T1_GE3
- Vishay SQ Rugged N-Channel MOSFET 20 V, 6-Pin TSOP-6 SQ3460EV-T1_GE3
