Vishay SQ Rugged Type N-Channel MOSFET, 12 A, 60 V Enhancement, 8-Pin SOIC SQ4850EY-T1_GE3
- N° de stock RS:
- 819-3923
- Référence fabricant:
- SQ4850EY-T1_GE3
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 paquet de 20 unités)*
21,90 €
(TVA exclue)
26,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 2 360 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 80 | 1,095 € | 21,90 € |
| 100 - 180 | 1,03 € | 20,60 € |
| 200 - 480 | 0,931 € | 18,62 € |
| 500 - 980 | 0,876 € | 17,52 € |
| 1000 + | 0,822 € | 16,44 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 819-3923
- Référence fabricant:
- SQ4850EY-T1_GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SQ Rugged | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 47mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 6.8W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Width | 4 mm | |
| Height | 1.55mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SQ Rugged | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 47mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 6.8W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Standards/Approvals No | ||
Width 4 mm | ||
Height 1.55mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
Liens connexes
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- Vishay SQ Rugged Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Vishay SQ Rugged Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212
- Vishay SQ Rugged Type N-Channel MOSFET 20 V Enhancement, 6-Pin TSOP SQ3460EV-T1_GE3
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