Vishay E Type N-Channel MOSFET, 25 A, 600 V Enhancement, 4-Pin PowerPAK SIHH26N60E-T1-GE3
- N° de stock RS:
- 124-2251
- Référence fabricant:
- SIHH26N60E-T1-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 unité)*
5,48 €
(TVA exclue)
6,63 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 18 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 5,48 € |
| 10 - 49 | 4,07 € |
| 50 - 99 | 3,41 € |
| 100 - 249 | 3,01 € |
| 250 + | 2,87 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 124-2251
- Référence fabricant:
- SIHH26N60E-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PowerPAK | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 135mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 202W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 77nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 8.1 mm | |
| Standards/Approvals | No | |
| Length | 8.1mm | |
| Height | 1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PowerPAK | ||
Series E | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 135mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 202W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 77nC | ||
Maximum Operating Temperature 150°C | ||
Width 8.1 mm | ||
Standards/Approvals No | ||
Length 8.1mm | ||
Height 1mm | ||
Automotive Standard No | ||
- Pays d'origine :
- TW
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
Features
Low figure-of-merit (FOM) RDS(on) x Qg
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses
MOSFET Transistors, Vishay Semiconductor
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