Vishay E Type N-Channel Power MOSFET, 51 A, 600 V Enhancement, 4-Pin PowerPAK SIHM080N60E-T1-GE3

N° de stock RS:: 653-177
Référence fabricant:: SIHM080N60E-T1-GE3
Fabricant:: Vishay

Vishay E Type N-Channel Power MOSFET, 51 A, 600 V Enhancement, 4-Pin PowerPAK SIHM080N60E-T1-GE3

Sous-total (1 bobine de 3000 unités)*

10 296,00 €

(TVA exclue)

12 459,00 €

(TVA incluse)

Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard

Unité	Prix par unité	la bobine*
3000 +	3,432 €	10 296,00 €

*Prix donné à titre indicatif

N° de stock RS:: 653-177
Référence fabricant:: SIHM080N60E-T1-GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	51A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PowerPAK
	Series	E
	Mount Type	PCB
	Pin Count	4
	Maximum Drain Source Resistance Rds	0.084Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	500W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	42nC
	Maximum Operating Temperature	150°C
	Length	8mm
	Width	7.9mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 51A
	Maximum Drain Source Voltage Vds 600V
	Package Type PowerPAK
	Series E
	Mount Type PCB
	Pin Count 4
	Maximum Drain Source Resistance Rds 0.084Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 500W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 42nC
	Maximum Operating Temperature 150°C
	Length 8mm
	Width 7.9mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHM080N60E-T1-GE3

Pays d'origine :: CN

Vishay Series E Power MOSFET, 600V Drain Source Voltage, 51A Drain Current - SIHM080N60E-T1-GE3

This power MOSFET is a high-voltage switching device intended for power-conversion and control applications in industrial electronics. It functions as an enhancement-mode N-channel transistor designed to handle high drain-to-source voltages while operating on PCB-mounted assemblies. Its construction suits demanding thermal environments and standard manufacturing processes.

Features and Benefits:

• 600V rating for high-voltage switching applications • 51 A continuous drain current for substantial load handling • 0.084 Ω Rds(on) for reduced conduction losses • 42 nC typical gate charge for predictable gate-drive sizing • 500W power dissipation for elevated power-handling capability • 150 °C maximum operating temperature for high-temperature tolerance

Applications

• Suitable for switch-mode power supplies in industrial automation • Ideal for motor-drive inverter stages in manufacturing equipment • Used for high-voltage DC-DC converters in power distribution • Can be used for hard-switched topologies in testing rigs • Suitable for intermediate circuits in renewable-energy inverters

What mounting style is required for circuit implementation?

It is designed for PCB mounting using a PowerPAK package with four pins to facilitate thermal and electrical connection.

How should gate-drive voltages be selected?

Gate-drive amplitude must not exceed the ±30V gate-source limit and should be chosen to balance switching speed with the 42 nC gate charge to control losses.

What ambient temperature range can it operate within?

The device supports operation down to -55 °C and up to 150 °C junction temperature, enabling use across wide environmental conditions.

How does the package assist thermal management?

The PowerPAK form factor provides a Compact thermal path to the PCB, helping to dissipate up to the specified 500W under appropriate board-level cooling strategies.