Vishay E Type N-Channel Power MOSFET, 32 A, 600 V Enhancement, 8-Pin PowerPAK SIHR120N60E-T1-GE3

N° de stock RS:: 653-083
Référence fabricant:: SIHR120N60E-T1-GE3
Fabricant:: Vishay

Vishay E Type N-Channel Power MOSFET, 32 A, 600 V Enhancement, 8-Pin PowerPAK SIHR120N60E-T1-GE3

Sous-total (1 bobine de 3000 unités)*

8 616,00 €

(TVA exclue)

10 425,00 €

(TVA incluse)

Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard

Unité	Prix par unité	la bobine*
3000 +	2,872 €	8 616,00 €

*Prix donné à titre indicatif

N° de stock RS:: 653-083
Référence fabricant:: SIHR120N60E-T1-GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	32A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PowerPAK
	Series	E
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.12Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	278W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	29nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Width	8mm
	Length	10.42mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 32A
	Maximum Drain Source Voltage Vds 600V
	Package Type PowerPAK
	Series E
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.12Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 278W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 29nC
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Width 8mm
	Length 10.42mm
	Automotive Standard No

Datasheet - SIHR120N60E-T1-GE3

Pays d'origine :: CN

Vishay Series E Power MOSFET, 600V Drain Source Voltage, 32A Maximum Continuous Drain Current - SIHR120N60E-T1-GE3

This power MOSFET is a high-voltage switching transistor designed for surface-mount power conversion and control in industrial systems. It operates as an N-channel enhancement device and is suited to applications requiring robust thermal tolerance and sustained power handling in demanding electrical environments.

Features and Benefits:

• 600V drain rating enables high-voltage switching applications • 32A continuous current supports substantial load currents • 0.12Ω Rds(on) minimises conduction losses at rated conditions • 278W power dissipation allows significant heat throughput • 29nC typical gate charge speeds switching transitions • 150°C maximum junction temperature endures elevated thermal stress

Applications

• Suitable for high-voltage motor drive power stages • Ideal for switched-mode power supplies in industrial equipment • Used for AC/DC converters requiring high dissipation capacity • Can be used for electronic ballast and lighting control circuits • Suitable for power switching in automation and control panels

What mounting style does it require for board assembly?

It is supplied in a leadless PowerPAK surface-mount package with eight pins, intended for soldered attachment to PCB lands and thermal vias for heat removal.

What gate drive considerations should I allow for?

The gate-source tolerance is ±30V, and the typical gate charge of 29nC requires a driver capable of sourcing and sinking sufficient current for the intended switching frequency.

How does its temperature range affect deployment?

The device is specified for operation down to -55°C and up to 150°C, allowing use across wide ambient and elevated-junction scenarios provided thermal management is implemented.

What electrical limits protect against overvoltage or excessive dissipation?

The maximum drain-source voltage is 600V and the rated power dissipation is 278W

designs should include appropriate clamping and thermal pathways to prevent exceedance.