Vishay E Type N-Channel Single MOSFETs, 32 A, 600 V Enhancement, 8-Pin PowerPAK SIHR120N60E-T1-GE3
- N° de stock RS:
- 653-083
- Référence fabricant:
- SIHR120N60E-T1-GE3
- Fabricant:
- Vishay
Sous-total (1 bobine de 3000 unités)*
10 959,00 €
(TVA exclue)
13 260,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Informations sur le stock actuellement non accessibles
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 3,653 € | 10 959,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 653-083
- Référence fabricant:
- SIHR120N60E-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 32A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | E | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.12Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 8 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 32A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series E | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.12Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 8 mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Vishay 4th generation E Series Power MOSFET optimized for high-performance switching applications. It offers a low figure of merit (FOM), reduced switching and conduction losses, and low effective capacitance. Packaged in the Compact PowerPAK 8x8LR, it's Ideal for use in server, telecom, lighting, and industrial power supplies.
Pb Free
Halogen free
RoHS compliant
Liens connexes
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