Vishay E Type N-Channel Single MOSFETs, 38 A, 600 V Enhancement, 8-Pin PowerPAK
- N° de stock RS:
- 653-080
- Référence fabricant:
- SIHR100N60E-T1-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 ruban de 1 unité)*
6,72 €
(TVA exclue)
8,13 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Informations sur le stock actuellement non accessibles
Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 6,72 € |
| 10 - 49 | 6,53 € |
| 50 - 99 | 6,31 € |
| 100 + | 5,45 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 653-080
- Référence fabricant:
- SIHR100N60E-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | E | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.105Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 347W | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 8 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series E | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.105Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 347W | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Width 8 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Vishay 4th generation E Series Power MOSFET designed for high-efficiency switching applications. It features a low figure of merit (FOM), reduced effective capacitance, and optimized thermal performance in a Compact PowerPAK 8x8LR package. Ideal for use in server, telecom, and power factor correction supplies, it delivers reliable performance in demanding environments.
Reduced switching and conduction losses
Pb Free
Halogen free
RoHS compliant
Liens connexes
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